| ID | 原文 | 译文 |
| 43836 | 通过优化刻蚀工艺参数提高 SiN/SiO2 刻蚀选择比，保持刻蚀后 SiO2 的厚度与改进前工艺相同。 | The thickness ofSiO2 after etching was the same as the original process by optimizing process parameters to improve the selection ratio of SiN/SiO2 etching. |
| 43837 | 测试结果表明，工艺改进后接触孔底部关键尺寸稳定性提升 36%，接触电阻稳定性提升 20%。 | The test results show that the stability of the critical dimension of thebottom of the contact holes increases by 36% and the stability of the contact resistance increases by 20%. |
| 43838 | 通过工艺改进提高了电参数稳定性，对 40 nm 工艺节点逻辑器件产品良率提升起到了关键作用。 | The stability of the electrical parameters is improved by improving the existing process, which plays a keyrole in improving the yield of 40 nm process node logic devices. |
| 43839 | 随着高压大功率 IGBT 器件容量的进一步提升，对考核其可靠性的功率循环测试装备在测量精度、测试效率和长期运行可靠性等方面提出了挑战。 | Power cycling test equipment with higher accuracy, efficiency and long life-timereliability is strongly needed to meet the requirements of high power IGBTs with higher power density. |
| 43840 | 针对柔性直流输电系统用高压大功率 IGBT 器件的测试需求，基于现有功率循环测试方法，增加了测试支路和辅助支路，提高了测试装备的测量精度和测试效率，增强了装备的长期运行可靠性，搭建了 90 kW/3 000 A 功率循环测试装备。 | A90 kW/3 000 A power cycling test equipment was built according to the requirements of high powerIGBTs applied in the flexible HVDC transmission system. |
| 43841 | 针对应用于柔性直流输电的两种不同封装形式高压大功率 IGBT 器件———压接型 IGBT器件和焊接式 IGBT 模块分别设计了相应的测试夹具，满足了柔性直流输电工程的需求， | Based on the basic test circuit of the power cycling test, two test branches and one auxiliary branch were added to improve the test accuracy, efficiencyand long life-time reliability of the test equipment. the corresponding test fixtures were respectively designed for press pack IGBTs and power IGBT modules which were two different packaging styles of highvoltage and high-power IGBT devices to meet the requirements of the flexible HVDC transmission system. |
| 43842 | 基于此装备对不同封装形式和电流等级的器件进行了 400 多万次的功率循环测试，验证了测试装备的测试功能和长期运行可靠性。 | More than 4 000 000 cycles in total have been conducted for different packaging styles and current ratingsup to now by this equipment.The basic test functions and long life-time reliability of this power cyclingtest equipment are verified by these cycles. |
| 43843 | 研究了 Cu /SiO2 逐层沉积增强的无杂质空位诱导 InGaAsP /InGaAsP 多量子阱混杂( QWI) 行为。 | InGaAsP /InGaAsP multiple quantum well intermixing (QWI) behavior induced by impurity free vacancy enhanced through Cu /SiO2 deposition was investigated. |
| 43844 | 在多量子阱 ( MQW) 外延片表面，采用等离子体增强的化学气相沉积 ( PECVD)不同厚度的 SiO2，然后溅射 5 nm Cu，在不同温度下进行快速热退火 ( ＲTA) 诱发量子阱混杂。 | On the surface of the multiplequantum well (MQW) epitaxial wafer, different thickness of SiO2 were grown by plasma-enhanced chemical vapor deposition (PECVD) , then 5 nm of Cu was sputtered, after rapid thermal annealing (ＲTA)at different temperatures, QWI was induced. |
| 43845 | 通过光荧光 ( PL) 谱表征样品在 QWI 前后的变化。 | Changes of the samples before and after QWI process werecharacterized by photoluminescence (PL) spectra. |