ID 原文 译文
43816 门极可关断 (GTO) 晶闸管是应用在脉冲功率领域中的一种重要的功率器件。 Gate turn-off (GTO) thyristor is an important power device applied in pulse power area.
43817 目前，由于常规 SiC GTO 晶闸管的阴极注入效率较低，限制了器件性能的提高。 At present, due to the low cathode injection efficiency of conventional SiC gate turn-off (SiC GTO) thyristor, the improvement of device performance is limited.
43818 提出了一种带有注入增强缓冲层的碳化硅门极可关断 (IEB-GTO) 晶闸管结构， A 4H-SiC GTO thyristor with injection enhancedbuffer layer (IEB-GTO) was proposed.
43819 相比于常规 GTO 晶闸管结构，该结构有着更高的阴极注入效率，从而减小了器件的导通电阻和功耗。 Compared with the conventional GTO (CON-GTO) thyristorstructure, the proposed one had higher cathode injection efficiency, thus the on-resistance and powerconsumption of the device were decreased.
43820 仿真结果表明，当导通电流为1 000 A/cm2时，IEB-GTO 晶闸管的比导通电阻比常规 GTO 晶闸管下降了约 45. 5%; The simulation results show that the specific on-resistance ofthe IEB-GTO thyristor is reduced by 45.5% approximately compared with the CON-GTO thyristor whenthe conduction current is 1 000 A/cm2.
43821 在脉冲峰值电流为 6 000 A、半周期为 1 ms 的宽脉冲放电过程中，器件的最大导通压降比常规 GTO 晶闸管降低了约 58. 5%。 And the maximum conduction voltage drop is reduced by 58.5%approximately compared with the CON-GTO thyristor in the process of wide-pulse discharge with peakcurrent of 6 000 A and half sinusoidal of 1 ms.
43822 采用水热法以 Cu 片为基底，Cu (NO3 )2 为铜源，十二烷基苯磺酸钠 ( SDBS) 为添加剂，通过调节 Ag+浓度，制备不同 Ag 掺杂 Cu2O (Ag /Cu2O) 薄膜。 Using hydrothermal method, the Ag-doped Cu2O (Ag /Cu2O) film was prepared by adjusting the Ag+ concentration, with Cu films as the substrate, Cu (NO3)2 as the copper source, andsodium dodecyl benzene sulfonate (SDBS) as the additive.
43823 研究了样品的光电性能及电容－电压特性等，并用 X 射线衍射 (XＲD)、扫描电子显微镜 ( SEM) 和能谱仪 (EDS) 对其晶体结构、形貌及组成进行了表征。 The photoelectric properties and capacitancevoltage characteristics of the samples were studied.And the crystal structure, morphology and compositionwere characterized by the X-ray diffraction (XＲD), scanning transmission electron microscopy (SEM)and energy dispersive spectroscopy (EDS).
43824 结果表明，当体系中 Ag+浓度为 0. 03 mmol /L 时，Ag /Cu2O薄膜的光电性能最佳， The results show that the Ag /Cu2O film has the best photoelectric property when the Ag+ concentration in the system is 0.03 mmol /L.
43825 光电压和光电流密度分别为 0. 458 5 V 和 3. 011 mA·cm－2，比 Cu2O 薄膜分别提高了 0. 205 1 V 和 1. 359 mA·cm－2; The photovoltage and photocurrent densities were 0.458 5 V and 3.011 mA · cm－2, respectively, which were 0.205 1 V and1.359 mA·cm－2 higher than those of the Cu2O film.