ID 原文 译文
43786 由于失效点本身尺寸小加上电路规模大，使得失效分析难度增加。 Since the failure site is tinier and the circuit scaleis becoming larger, failure analysis is more difficult than before.
43787 为了能够对故障点进行快速、精确定位，提出了基于失效物理的集成电路故障定位方法。 The fault localization method for the integrated circuit based on the failure physics was proposed, in order to make a quick and precise fault localization of the defect.
43788 根据 CMOS 反相器电路的失效模式提出了 4 种主要故障模型: According to the failure modes of inverters in CMOS ICs, four main fault modelswere proposed.
43789 栅极电平连接至电源 (地)、栅极连接的金属化高阻或者开路、氧化层漏电和 pn 结漏电。 Those were abnormal resistive path of gate to VDD (or GND), high resistive path or openof gate, gate oxide leakage and pn junction leakage.
43790 结合故障模型产生的光发射显微镜 (PEM) 和光致电阻变化 (OBIＲCH) 现象的特征形貌和位置特点，进行合理的失效物理假设。 The signature and location of photon emission microscopy (PEM) and optical beam induced resistance change (OBIＲCH) spots generated by thesefailure modes were studied, by which a proper failure physics was suggested.
43791 结果表明，基于该方法可对通孔缺陷、多层金属化布线损伤以及栅氧化层静电放电损伤失效进行有效的定位， The results show that the viadefect, the electrical damage of multilayered metallization and ESD failure of gate oxide can be successfully localized based on the method.
43792 快速缩小失效范围，提高失效分析的成功率。 The failure spot is narrowed down quickly and the successful rate offailure analysis is also improved by the method.
43793 寄生电感是影响功率管开关特性的重要因素之一， Parasitic inductance is one of the most important factors affecting the switching characteristics of power transistors.
43794 开关频率越高，寄生电感对低压增强型氮化镓高电子迁移率晶体管 (GaN HEMT) 的开关行为影响越深，使其无法发挥高速开关的性能优势。 And it has a larger influence on the switching behavior of low voltage E-modegallium nitride high electron mobility transistors (GaN HEMT) with the increase of switching frequency, which limits full utilization of performance advantages of high speed switching in high frequency applications.
43795 通过建立数学模型，理论分析了考虑各部分寄生电感后增强型 GaN HEMT 的开关过程， By establishing mathematical model, the detailed switching process of E-mode GaN HEMT witheach parasitic inductance was analyzed theoretically.