ID 原文 译文
43766 可有效控制刻蚀的精度并降低栅槽表面的粗糙度。 And it could effectively control the etching accuracy andreduce the surface roughness.
43767 同时，利用高温氮气退火技术能够修复 Al2O3 /GaN 界面的界面陷阱，并降低 Al2O3 栅介质体缺陷， Simultaneously, the interface traps of the Al2O3 /GaN interface were repairedby using high-temperature nitrogen annealing technology, and the body defects of Al2O3 gate dielectric werereduced.
43768 因此能够减少 Al2O3 /GaN 界面的界面态密度并提升栅极击穿电压。 Therefore, the interface state density of the Al2O3 /GaN interface was reduced and the gate breakdown voltage was increased.
43769 采用这两项技术制备的硅基 GaN 增强型 Al2O3 /GaN MIS-HEMT 具有较低的栅槽表面平均粗糙度 (0. 24 nm)、较高的阈值电压 (4. 9 V) 和栅极击穿电压 (14. 5 V) 以及较低的界面态密度 (8. 49×1011 cm－2)。 The GaN E-mode Al2O3 /GaN MIS-HEMT fabricated on Si substrate by thesetwo technologies has the advantages of lower surface average roughness (0.24 nm), higher threshold voltage (4.9 V), gate breakdown voltage (14.5 V) and lower interface state density (8.49×1011 cm－2).
43770 研究了 Si 缓冲层对选区外延 Si 基 Ge 薄膜的晶体质量的影响。 The effect of Si buffer layer on the crystal quality of selective area epitaxy Ge film on Sisubstrate was studied.
43771 利用超高真空化学气相沉积系统，结合低温 Ge 缓冲层和选区外延技术，通过插入 Si 缓冲层，在 Si /SiO2 图形衬底上选择性外延生长 Ge 薄膜。 Combining with the low temperature Ge buffer layer and selective area epitaxy technology, by inserting Si buffer layer, Ge film on patterned Si /SiO2 substrate was grown selectively by usingultra-high vacuum chemical vapor deposition.
43772 采用 X 射线衍射 (XＲD)、扫描电子显微镜 (SEM)、原子力显微镜(AFM) 表征了 Ge 薄膜的晶体质量和表面形貌。 By X-ray diffraction (XＲD), scanning electron microscope(SEM) and atomic force microscope (AFM), the crystal quality and surface morphology of Ge filmwere characterized.
43773 测试结果表明，选区外延 Ge 薄膜的晶体质量比无图形衬底外延得到薄膜的晶体质量要高; The results show that the crystal quality of Ge film based on selective area epitaxy technology is better than that of the epitaxial film grown on no-patterned substrate.
43774 选区外延 Ge 薄膜前插入 Si 缓冲层得到 Ge 薄膜具有较低的 XＲD 曲线半高宽以及表面粗糙度， By inserting Si bufferlayer before selective area epitaxy Ge film, the Ge film grown selectively owns lower full-width-at-halfmaximum of the XＲD profile and lower surface roughness.
43775 位错密度低至 5. 9×105 /cm2， And the dislocation density of the Ge film is low to 5.9×105 /cm2.