ID 原文 译文
43756 虽然漂移区的少数载流子改变了 MPS 二极管的工作模式，增大了电流， The operating modeof the MPS diode is changed by the minority carriers in the drift region, and the current is increased.
43757 但是存储在漂移区的少数载流子增大了反向峰值电流和恢复时间， The reverse peak current and recovery time are increased because of the minority carriers stored in the drift region.
43758 进而增大了功耗并降低了关断速度。 Therefore, the power consumption is increased and the turn-off speed is reduced.
43759 折中考虑正向电流和反向恢复特性，可获得具有正向电流大、反向峰值电流小和反向恢复时间短的 MPS 二极管。 Considering about the characteristics of the forward current and reverse recovery, the MPS diode with large forward current, small reverse peak current and short reverse recovery time can be obtained.
43760 作为一种Ⅲ-Ⅴ族化合物半导体材料，AlN 不仅具有超宽直接带隙 ( 6. 2 eV) 、高热导率、高电阻率、高击穿场强、优异的压电性能和良好的光学性能，而且 AlN 晶体还与其他Ⅲ-N材料具有非常接近的晶格常数和热膨胀系数。 As one of the Ⅲ-Ⅴ compound semiconductor materials, AlN has properties of ultra-widedirect bandgap (6.2 eV), high thermal conductivity, high electrical resistivity, high breakdown fieldstrength, excellent piezoelectric properties and good optical properties, and AlN crystals have very closelattice constants and thermal expansion coefficients with other Ⅲ-N materials.
43761 这些特点决定了 AlN 在 GaN 外延、紫外光源、辐射探测器、微波毫米波器件、光电器件、电力电子器件以及声表面波器件等领域具有广阔的应用前景。 These characteristics determine the broad application prospects of AlN in the fields of GaN epitaxial, ultraviolet light source, radiation detector, microwave /millimeter wave devices, optoelectronic devices, power electronic devices andsurface acoustic wave devices.
43762 介绍了 AlN 材料在功率器件、深紫外 LED、激光器、传感器以及滤波器等领域的应用现状， The application status of AlN material in power electronic devices, deep ultraviolet LEDs, LDs, sensors and filters is introduced.
43763 并对 AlN 材料及其应用的未来发展趋势进行了分析和展望。 Future development and application trends ofAlN materials are analyzed and forecasted.
43764 采用高温热氧化栅极凹槽刻蚀工艺并结合高温氮气氛围退火技术，制备出了高阈值电压的硅基 GaN 增强型 Al2O3 /GaN 金属－绝缘体－半导体高电子迁移率晶体管 (MIS-HEMT)。 GaN E-mode Al2O3 /GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs) with high threshold voltage were fabricated on Si substrate by using high-temperature thermal oxidation gate etching process and high-temperature nitrogen atmosphere annealing technique.
43765 采用高温热氧化栅极凹槽刻蚀工艺刻蚀 AlGaN 层，并在 AlGaN/GaN 界面处自动终止刻蚀， The AlGaN layer was etched by using the high-temperature thermal oxidation gate etching process, which couldbe self-terminated at the AlGaN/GaN interface.