ID 原文 译文
43746 分析认为，预铺 Ga、氮化等方式处理衬底表面，改变了 PSS 微结构，有利于生长表面平滑、晶体质量高、残余应力小的 GaN薄膜。 Theanalysis shows that pre-Ga and nitriding treatment of the substrate surface have changed themicrostructure of the PSS and are conducive to the growth of GaN films with smooth surface, high crystalquality and low residual stress.
43747 通过仿真键合引线不同拱高、直径和数量对回波损耗的影响，探究了高频下先进封装结构中典型键合引线的电磁特性，以指导其优化设计。 By simulating the effects of various arch rise, diameters and quantities of bonding wireson return loss, the electromagnetic properties of typical bonding wires in advanced package structures athigh frequency were explored to guide the optimization design.
43748 结合其电磁全波仿真模型建模，提出了改进的 “T”型等效电路并解释了相关现象和结论。 Combined with its electromagnetic fullwave simulation model, an improved " T" -shaped equivalent circuit was proposed to explain the relatedphenomena and conclusions.
43749 仿真结果表明，相比直径为 25 μm 的键合引线，75 μm 的同类引线在 6. 8 GHz 处可将回波损耗改善近 10 dB; The simulation results show that compared with the bonding wire with adiameter of 25 μm, the similar wire with a diameter of 75 μm can improve the return loss by nearly 10 dBat 6.8 GHz.
43750 拱高为 0. 15 mm 的键合引线比0.35 mm 的键合引线在 7. 4 GHz 处可将回波损耗改善约 12. 3 dB; Bonding wires with an arch rise of 0.15 mm can improve the return loss by 12.3 dB at7.4 GHz compared with the bonding wire with an arch rise of 0.35 mm.
43751 采用三根线并联的连接方式相比单根的成本较高，但在全频段回波损耗均可得到改善。 The connection with three bonding wires in parallel is more expensive than a single bonding wire, but the return loss can be improvedwithin the whole frequency range.
43752 最后研究了芯片堆叠结构中键合引线不同连接方式的电磁特性，结果表明，转接式相比直连式具有更好的传输特性和较低的电磁干扰。 Finally, the electromagnetic characteristics of different connectionmodes of bonding wires in die stacked structures were studied.The results show that the transfer type hasbetter transmission characteristics and lower electromagnetic interference than the direct connection type.
43753 混合 pin /肖特基 (MPS) 二极管是广泛应用于电子电路中的快恢复功率器件，具有高击穿电压、快速开关和正向电流大等特性。 Merged pin /Schottky (MPS) diode with high breakdown voltage, fast switching speedand large forward current density is fast and soft restoration of power device widely used in electronic circuits.
43754 对 MPS 二极管漂移区的少数载流子的特性进行了仿真分析。 The characteristics of minority carriers in the drift region of the MPS diode were simulated and analyzed.
43755 仿真结果表明，MPS 二极管的 p+区向漂移区注入的少数载流子浓度随外加正向电压和 pn 结面积占元胞总面积比例的增大而增大。 The simulation results show that the minority carriers are injected into the drift region from the p+region of the MPS diode, and the concentration minority carriers is increased with the increase of the external forward voltage and the ratio of the pn junction area to the total area of the cell.