ID 原文 译文
43736 当有石墨烯填充时，激光器的温升随着沟道宽度和石墨烯厚度增加而提高。 When graphene is filled in the channel, the temperature rise of the lasers is improved with the increase of the channel width and the graphene thickness.
43737 采用 AlN 钝化层、Au 层加厚和石墨烯填充优化的激光器结构，其温升比传统结构激光器的温升低 6 ℃。 Finally, the temperature rise in the optimized structure with AlN passivation layer, Au thickening layer and graphene filling is6 ℃ less than that in unoptimized structures.
43738 该结果为设计制备 In?GaAsP /InGaAsP 激光器改善其散热性能提供指导， Such results offer a reference for the design and fabricationof InGaAsP /InGaAsP lasers, which aims at improving their heat dissipation performance.
43739 可为其他 InP 基光子集成回路改善热性能提供参考。 Moreover, these results may also provide a reference for InP-based photonic integrated circuit to improve their heatdissipation performance.
43740 采用预铺 Ga 或 NH3 氮化等方式原位处理图形化蓝宝石衬底 ( PSS) 表面，然后外延生长了 GaN 薄膜， The patterned sapphire substrate (PSS) surface was treated in-situ by pre-Ga or NH3 nitriding, and then GaN films were grown epitaxially.
43741 研究了 PSS 表面预处理对 GaN 薄膜表面形貌、晶体质量以及残余应力的影响。 The effects of the PSS surface pretreatment on thesurface morphology, crystal quality and residual stress of GaN films were studied.
43742 结果显示，PSS 经过预铺 Ga 后生长的 GaN 薄膜具有平滑的表面和清晰平直的原子台阶，且位错密度最低; The results show thatthe GaN film grown on the PSS after pre-Ga treatment has smooth surface, straight atomic steps and thelowest dislocation density.
43743 氮化后生长的 GaN 薄膜原子台阶较宽，螺型位错密度较低; GaN films grown after nitriding treatment have wider atomic steps and lowerscrew dislocation density.
43744 衬底未经表面处理生长的 GaN 薄膜，原子台阶模糊，位错密度最高; GaN films grown on the substrate without surface treatment have a fuzzy atomicstep and the highest dislocation density.
43745 同时，与氮化或未经预处理的方法相比，经过预铺 Ga 的方式预处理 PSS 表面后生长的 GaN 薄膜残余应力最小。 At the same time, compared with nitriding or non-pretreatmentmethods, GaN films grown after pre-Ga treatment of the PSS surface have the smallest residual stress.