ID 原文 译文
43726 因此，适当调整 In 的比例有利于获得较高器件性能的 In2O3 /IGZO 异质结沟道 TFT。 Therefore, tuning the In contents in metal oxide thin films is beneficial to obtain higher device performance of In2O3 /IGZO heterojunction channel TFTs.
43727 采用金刚石衬底可显著提升 GaN 微波功率器件的散热能力，从而制作尺寸更小、功率更高的金刚石基 GaN 高电子迁移率晶体管 ( HEMT) 器件。 The use of a diamond substrate material can significantly improve the heat dissipation capability of GaN-based microwave power devices, thereby GaN high electron mobility transistors (HEMTs)on diamond substrate with smaller scale and higher power can be manufactured.
43728 介绍了金刚石基 GaN HEMT 技术优势。 The advantages of GaNHEMTs on diamond substrate technology are introduced.
43729 综述了金刚石基 GaN HEMT 的金刚石衬底生长、金刚石与 GaN HEMT 层结合、金刚石/GaN 界面优化等制造技术的研发现状， The development status of diamond substrategrowth, diamond and GaN HEMT layer bonding and diamond /GaN interface optimization of GaN HEMTson diamond substrate is reviewed.
43730 并概述了金刚石基 GaN 微波功率器件的最新研究进展。 The latest research progress of GaN-on-diamond microwave power devices is summarized.
43731 最后分析了金刚石基 GaN HEMT 制造技术面临的挑战和未来的发展趋势，表明制作低成本大尺寸金刚石衬底材料、提升 GaN/金刚石界面热阻以及大幅提升金刚石基 GaN 器件的性能并在射频功率器件领域实现商用将是未来发展的重点。 Finally, the challenges and future development trends of GaN HEMTs on diamondsubstrate manufacturing technology are analyzed, which shows that making low-cost and large-sizediamond substrate materials, improving GaN/diamond interface thermal resistance and greatly improvingthe performance of diamond-based GaN devices and then commercially available in the field of ＲF powerdevices will be the focus of future development.
43732 采用二维有限元法 ( FEM) 模拟了激射波长为 1 550 nm 的 InGaAsP /InGaAsP 多量子阱 ( MQW) 双沟道脊波导 ( DCＲW) 激光器的热分布， Heat distribution in InGaAsP /InGaAsP multiple quantum wells (MQWs) doublechannel ridge waveguide (DCＲW) lasers with a laser wavelength of 1 550 nm was simulated by using atwo-dimensional finite element method (FEM) .
43733 系统研究了钝化层材料、沟道宽度、Au层厚度和石墨烯填充对激光器散热的影响。 The effects of the passivation material, channel width, Au layer thickness and graphene filling on thermal dissipation of lasers were systematically investigated.
43734 模拟结果表明，上述参数均对激光器的有源区温度和热分布产生影响。 The simulation results show that all the above parameters have influence on temperature and heat distribution of the active region of the laser.
43735 当没有石墨烯填充时，激光器的温升随着沟道宽度减少而提高; Without graphene, the temperature rise of the lasers is improved withthe decrease of the channel width.