ID 原文 译文
43716 基于 SMIC 0. 18 μm 标准 CMOS 工艺对设计的主动淬灭电路进行了流片，电路芯片与 GM-APD 互连测试结果表明，该电路可实现对 GM-APD 的快速淬灭与恢复，淬灭时间约为 887 ps，恢复时间约为 325 ps，最小死时间约为 29. 8 ns，满足多回波探测应用要求。 The proposed active quenching circuit was taped out based on SMIC 0.18 μmstandard CMOS process.Tests and experiments were performed after the circuit chip was interconnectedwith GM-APD, showing that the circuit can realize rapid quenching and restoring for GM-APD with thequenching time of about 887 ps, the recovery time of about 325 ps and the minimal dead time of about29.8 ns, meeting the requirements of multiple-echo detection application.
43717 研究了 Statz 模型对于表征射频 ( ＲF) 金属氧化物半导体场效应晶体管 ( MOSFET)器件特性的适用情况，并提出了一个 MOSFET 非线性电容改进模型。 The applicability of the Statz model to characterize the characteristics of radio frequency(ＲF) metal-oxide-semiconductor field-effect-transistors (MOSFETs) was studied, and an improvedmodel of MOSFET nonlinear capacitance was proposed.
43718 对英飞凌公司生产的规格为 4×0. 6 μm×18 ( 栅指数×栅宽×元胞数) 、栅长为 90 nm 的 MOSFET 进行 S 参数实验测量。 S parameters were measured on a 90 nm gatelength MOSFET fabricated by Infineon Technologies with a specification of 4×0.6 μm×18 (number ofgate fingers×gate width×number of unit cells) .
43719 经过去嵌剥离所有寄生元件后，在多个偏置条件下分别使用小信号等效电路模型提取出 MOSFET 非线性栅源电容 Cgs和栅漏电容 Cgd的数据; After de-embedding and stripping off all parasitic components, a small signal equivalent circuit model was applied to extract the nonlinear gate-to-source capacitance Cgs and gate-to-drain capacitence Cgd data under multiple bias conditions.
43720 对比了传统 Statz 模型以及改进模型的仿真结果与实验测量数据的相对误差。 The relative errors of thesimulation results and experimental data between the traditional Statz model and the improved model werecompared.
43721 仿真结果和误差分析表明改进模型与实验测量数据吻合很好，在大部分工作范围内误差控制在 5%以下，证明改进模型适用于表征 MOSFET 的非线性电容特性。 The simulation results and error analysis show that the data of the improved model are wellagree with the experimental data, and the error is controlled below 5% in most working range, whichproves that the improved model is suitable to characterize the nonlinear capacitance characteristics ofMOSFETs.
43722 利用喷墨打印技术制备了非晶铟镓锌氧化物 ( IGZO) 薄膜、铟氧化物 ( In2O3 ) 薄膜和性能明显改善的双层 In2O3 /IGZO 异质结沟道薄膜，研究了薄膜的物理与电学特性。 Amorphous indium gallium zinc oxide (IGZO) films, indium oxide (In2O3) films anddouble-layer In2O3 /IGZO heterojunction channel films with improved performance were successfully fabricated by inkjet printing technology, and the physical and electrical properties of these films were investigated.
43723 结果表明，喷墨打印制备的金属氧化物薄膜具有较高的光学透过率与较低的表面粗糙度; The results show that the metal oxide films prepared by inkjet printing have high optical transmittance and low surface roughness;
43724 嵌入的 In2O3 层薄膜能减小 IGZO 与 In2O3 间的界面缺陷，明显提高 In2O3 /IGZO 薄膜晶体管 ( TFT) 的性能及其偏压稳定性。 and the embedded In2O3 layer films can reduce the interface defects between IGZO and In2O3 and significantly improve the performance and bias stability of In2O3 /IGZO thinfilm transistors (TFTs) .
43725 随着 IGZO 中 In 含量的增加，载流子浓度升高，器件的迁移率增大，但 In2O3 与IGZO 间能级势垒会逐渐降低，最后导致难以控制关态电流和阈值电压， As the In content in IGZO thin films increases, the carrier concentration increases, and device mobility increases, but the energy barrier between In2O3 and IGZO decreases, which ultimately makes it difficult to control off-state current and threshold voltage.