ID 原文 译文
43696 搭建了第一类短路测试平台并对 SiC MOSFET 进行了短路测试，分析了漏源极电压退饱和保护及短路测试平台原理， A short-circuit test platform was built for SiCMOSFET short-circuit test, and the principle of drain-source voltage desaturation protection and short-circuit test platform were analyzed.
43697 在此基础上研究了栅极电阻、栅源极电压等外部参数对 SiC MOSFET 短路特性的影响，为 SiC MOSFET 器件的应用及驱动器的设计提供了一定的指导。 Based on this, the effects of external parameters such as gate resistanceand gate-source voltage on the short-circuit characteristics of SiC MOSFETs were studied, which provides a guidance for the application of SiC MOSFET devices and the design of drivers.
43698 对富铟磷化铟 ( InP) 晶体中铟夹杂物的基体特征进行了分析和表征。 Matrix characteristics of indium inclusions in In-rich indium phosphide (InP) crystalswere analyzed and characterized.
43699 在富铟熔体中制备了 InP 单晶，利用金相显微镜及红外透射显微镜研究 InP 晶体中的铟夹杂物形态及其基体周围的影响区的形成。 InP single crystals were prepared in indium-rich melt, then the morphology of indium inclusions in InP crystals and the formation of its affected zone around the matrix werestudied by metallurgical microscope and infrared transmission microscope.
43700 研究发现在铟夹杂物周围的 InP 基体上存在一些轮廓线。 It is found that contours areformed in the InP matrix around indium inclusions.
43701 基于铟夹杂物的形成过程和其对周围 InP 基体的影响，分析了铟夹杂物及其周围轮廓线的形成机理。 Based on the crystallization process of indium inclusions and its influence on the InP matrix around, the formation mechanism of indium inclusions and thecontours around it was analyzed.
43702 通过位错腐蚀发现，铟夹杂物周围的 InP 基体上存在高的位错区，沿着晶体生长方向的位错密度偏高。 By dislocation corrosion, it is found that there is a high dislocation areaon the InP matrix around the indium inclusions, and the dislocation density along the direction of crystalgrowth is higher.
43703 通过力学分析发现，这种位错分布不均匀主要是由于富铟熔体结晶过程中沿着温度梯度方向的体积膨胀较大所致。 Through mechanical analysis, it is found that the uneven dislocation distribution ismainly due to the larger volume expansion along the temperature gradient during the crystallization ofindium-rich melt.
43704 建立了 Elman 神经网络模型来实现绝缘栅双极型晶体管 ( IGBT) 的寿命预测。 Elman neural network model was established to realize life prediction of insulated gate bipolar transistors (IGBTs) .
43705 分析了 IGBT 的结构及其失效原因， The structure and failure causes of IGBTs were analyzed.