ID 原文 译文
43686 隧穿氧化物钝化接触 ( TOPCon) 技术已成为当前产业化高效太阳电池的重点研究方向之一。 Tunneling oxide passivation contact (TOPCon) technique has become one of the key research directions of industrialized high-efficiency solar cells.
43687 报道了可应用于规模化生产的 n 型双面 TOPCon 太阳电池技术，对前表面 SiO2 /多晶硅钝化层进行了优化设计。 The n-type bifacial TOPCon solar cells technique which can be applied to mass production was reported, and the optimization design of SiO2 /poly Sipassivation layer on front surface was completed.
43688 为了有效降低接触电阻，太阳电池的背表面采用了全面积 SiO2 /多晶硅钝化层结构;为避免多晶硅层对太阳光的寄生吸收，仅将 SiO2 /多晶硅钝化层应用于前表面金属接触的底部。 In order to reduce the contact resistance effectively, afull-area SiO2 /poly Si passivation layer was used on the back side of the solar cell, while the SiO2 /polySi passivation layer was only applied to the bottom of the metal contact on the front side to avoid parasiticabsorption of sunlight by the poly Si layer.
43689 J-V 特性和少子寿命等分析显示，双面 TOPCon 结构设计显著提升了太阳电池的表面钝化接触性能，其开路电压和短路电流密度显著增加。 The analyses of J-V characteristics and minority carrier lifetimeshow that the bifacial TOPCon structure design significantly improves the passivation contact performanceof the solar cell surface and the open-circuit voltage and the short circuit current density of solar cells aresignificantly increased.
43690 所制备的面积为 239 cm2 的双面TOPCon 太阳电池的平均正面转换效率可达 20. 33%，相对正面无 SiO2 /多晶硅钝化层的常规钝化发射极及背表面全扩散 ( PEＲT) 结构的太阳电池转换效率提升了 0. 29%。 Thus, the average front conversion efficiency of the prepared bifacial TOPConsolar cell with an area of 239 cm2 can reach 20.33%, which is 0.29% higher than that of conventional passivated emitter and rear totally diffused (PEＲT) solar cells without SiO2 /poly Si passivation layer onthe front side.
43691 以 SiC MOSFET 为代表的功率器件的驱动及保护技术长期被国外垄断， The driving and protection technology of power devices represented by SiC MOSFETs has long been monopolized by foreign countries.
43692 国内对 SiCMOSFET 的驱动保护技术研究较少。 In addition, there are few researches on the driving protectiontechnology of SiC MOSFETs in China.
43693 SiC MOSFET 栅极氧化层薄、短路耐量小，由于高频开关特性，其对回路寄生参数的影响更加敏感，桥臂结构应用时更易因串扰而引起误导通， The SiC MOSFET has a thin gate oxide layer and low short-circuittolerance.It is more sensitive to the influence of loop parasitic parameters and the bridge arm structure ismore likely to be mis-conducted when crosstalk appears due to the high-frequency switching characteristics,
43694 因此快速检测并可靠关断的短路保护技术显得尤为重要。 so it is especially important to develop the short-circuit protection technique of quick detection andreliable shutting.
43695 设计了基于 FPGA 的数字式 SiC MOSFET 驱动保护电路，实现了短路保护盲区时间易于调整。 The digital SiC MOSFET drive protection circuit based on FPGA was designed to realizethe easy adjustment of short-circuit protection blanking time.