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43666 流片测试结果表明:射频频率 1. 0 ～ 2. 0 GHz，对应本振频率 1. 0 ～ 2. 0 GHz，最佳本振输入功率为 0 dBm，转换增益大于－7. 0 dB，射频输入三阶交调大于 25 dBm， The test resultsshow that when the ＲF frequency is 1.0－2.0 GHz, corresponding to the LO frequency of 1.0－2.0 GHz, the optimal LO input power is 0 dBm and the conversion gain is above －7.0 dB, the ＲF input third orderintercept point is above 25 dBm.
43667 混频器工作电压为3.3 V，功耗为 112 mW。 The power consumption of the mixer is 112 mW under a supply voltage of 3.3 V.
43668 该高线性无源双平衡混频器可满足工程应用。 The designed passive double balanced mixer with high linearity can meet the need of engineering applications.
43669 介绍了高分辨 X 射线衍射 ( HＲXＲD) 面扫描技术在评估 4H-SiC 抛光片整体结晶质量方面的应用。 The application of the high resolution X-ray diffraction (HＲXＲD) mapping technique inevaluating the crystal quality of 4H-SiC polished wafers was presented.
43670 对 4H-SiC 抛光片整片及局部特定位置进行 HＲXＲD 摇摆曲线面扫描， The whole and local area rockingcurve mappings of the 4H-SiC wafers were tested by HＲXＲD.
43671 并拟合摇摆曲线半高宽 ( FWHM) 峰值得到的极图，观察 4H-SiC 抛光片表面的 FWHM 分布范围、分布特点和多峰聚集区。 The pole figure was obtained by fitting thepeak height of the full width at half maximum (FWHM) of the rocking curve, and the FWHM distribution range, distribution characteristics and multi-peak accumulation area on the surface of the 4H-SiC wafers were observed.
43672 结合表面缺陷测试仪和偏振光显微镜测试方法，对因螺旋生长产生的晶界分布聚集区以及边缘高应力晶界聚集区进行了表征。 The surface defect tester and the polarized light microscope were used to characterizethe grain boundary distribution aggregation areas due to the spiral growth and the high stress domain grainboundary aggregation zones at the edge of the wafers.
43673 二者测试结果与 HＲXＲD 摇摆曲线面扫描的结果一致。 The test results are consistent with the observationby the HＲXＲD rocking curve mapping technique.
43674 对多片样品在不同区域使用不同测试方法得到的结果均验证了 HＲXＲD 摇摆曲线面扫描可以宏观识别晶畴界面聚集区，清楚辨别出位于晶片中心附近由于螺旋生长面交界形成的晶畴界面，以及位于晶片边缘、受生长热场影响晶粒畸变产生的高应力晶畴界面。 The results obtained by using different test methods fordifferent samples in different regions verify that the HＲXＲD rocking curve mapping can macroscopicallyidentify the crystal domain boundary aggregation area, clearly distinguish the crystal domain boundary induced by the interface of the spiral growth surface near the center of the wafer, and the high-stress crystdomain boundary at the edge of the wafer that is affected by the grain growth distortion caused by thegrowth thermal field.
43675 提出了一种分辨率、电源电压等性能指标可配置的逐次逼近寄存器型 ( SAＲ) 模数转换器 ( ADC) 的设计思想和实现方式。 Design ideas and implementation ways of a successive approximation register (SAＲ)analog-to-digital converter (ADC) with configurable performance specifications such as the resolution andpower supply voltage were presented.