ID 原文 译文
43646 用光学显微镜、扫描电子显微镜、喇曼光谱和光致发光光谱对制备的层状 MoS2 膜表面形貌、层数、光学特性进行了研究。 The surface morphology, layer number and optical properties of the preparedlayered MoS2 films were investigated by the optical microscope, scanning electron microscope, Ramanspectrum and photoluminescence spectrum.
43647 分析了源和衬底距离对 MoS2 薄膜沉积的影响, The influence of the distance between the source and substrateon the deposition of the MoS2 film was analyzed.
43648 发现距离较近有利于成核概率增大,形成连续膜,但是易引入不稳定因素导致立体生长的 MoS2 纳米片, It is found that a closer distance is beneficial to the increase of nucleation probability and the formation of continuous film, but it is easy to introduce unstablefactors to lead to the stereo growth of MoS2 nanosheets.
43649 同时观察到出现树枝状生长,这是由于前驱体质量过剩引起的部分晶面生长速率过高导致的。 And the dendritic growth is observed at the sametime, which is due to the excessive growth rate of the partial crystal plane caused by the excess mass ofthe precursor.
43650 喇曼光谱测试表明,薄膜大部分为单层膜和双层膜,有少量的多层膜, The Raman spectra show that most of the films are monolayer and bilayer films, with asmall number of multilayer films.
43651 膜的光致发光光谱强度与层数有关,单层膜光致发光光谱强度最强。 The photoluminescence spectrum intensity is related to the number oflayers, and the photoluminescence spectrum of the monolayer film has the highest intensity.
43652 芯片原子钟 ( CSAC) 可以提供精准的时间基准,具有较好的应用前景。 The chip scale atomic clock (CSAC) provides accurate time reference and has good application prospects.
43653 利用微型PIC单片机和增量式比例-微分-积分 ( PID) 算法设计了一种 CSAC 微电子机械系统 ( MEMS)原子气室数字温控系统,并通过磁控溅射方法制作了 MEMS 原子气室专用的氧化铟锡 ( ITO) 加热玻璃。 A digital temperature control system for the CSAC micro-electromechanical system(MEMS) atomic vapor cell was designed by using micro peripheral interface controller (PIC) microcontroller and increment proportion integral differential (PID) algorithm, and some dedicated ITOheating glasses for the MEMS atomic vapor cell were fabricated by the magnetron sputtering method.
43654 温度是影响 CSAC 稳定度的一个重要因素,解决了 CSAC 系统气室温控的加热不均匀问题,温控精度达到了 0. 10 ℃,达到了 CSAC 温控精度优于 0. 15 ℃的要求。 Temperature is one of the important factors that affect the stability of the CSAC.The system solves the problemof uneven heating of the CSAC vapor cell, and the temperature control accuracy reaches 0.10 ℃, whichmeets the requirement that the temperature control accuracy of the CSAC is better than 0.15 .
43655 通过饱和吸收光谱实验,获得了明显的饱和吸收谱线。 Aftersaturated absorption spectroscopy experiments, a significant saturated absorption line was obtained.