ID 原文 译文
43636 结果表明点状缺陷主要是由于锗单晶抛光片表面沾污没有彻底清洗干净以及清洗过程中产生新的缺陷造成的。 It is showed that the point defects are mainly caused bythe new defects induced by the cleaning process and the facts that the surface contamination on the Gepolishing wafer is not thoroughly cleaned.
43637 采用氢氟酸溶液浸泡、SC－1 溶液低温短时间清洗结合低温去离子水冲洗后的锗抛光片进行外延， The Ge polished wafer was used for epitaxy after soaking in HFsolution, cleaning in SC － 1 solution at low temperature for short time and rinsing in low temperaturedeionized water.
43638 用其制备的太阳电池光电转换效率由原来的 25%提高到 31%。 The photoelectric conversion efficiency of the solar cells prepared by the Ge epitaxial wafer increase from 25% to 31%.
43639 研究了无凹槽 AlGaN/GaN 肖特基势垒二极管 ( SBD) 的正向电流输运机制。 The forward current transport mechanism of the recess-free AlGaN/GaN Schottky barrierdiodes (SBDs) were studied.
43640 分别采用 Ni /Au 和 TiN 作为阳极金属材料制备了无凹槽 AlGaN/GaN SBD，对比了两种 SBD 的直流特性。 Ｒecess-free AlGaN/GaN SBDs were fabricated by using Ni /Au and TiN asanode metal materials respectively, and the DC characteristics of two kinds of SBDs were compared.
43641 并通过测量器件的变温 I-V 特性，研究了器件的正向电流输运机制。 Theforward current transport mechanism of the devices were studied by measuring the voltage-current characteristics at different temperatures.
43642 结果表明，TiN-SBD( 0. 95 V@1 mA·mm－1) 与 Ni /Au-SBD( 1. 15 V@ 1 mA·mm－1) 相比实现了更低的开启电压，从而改善了正向导通特性。 The results show that compared with the Ni /Au-SBD (1.15 V @1 mA·mm－1) , a lower turn-on voltage of the TiN-SBD (0.95 V@ 1 mA·mm－1) is achieved and theforward conduction characteristic is improved.
43643 研究发现两种 SBD 的势垒高度和理想因子都强烈依赖于环境温度， It is found that the potential barrier height and ideality factor of both SBDs are strongly depend on the ambient temperature.
43644 通过引入势垒高度的高斯分布模型解释了这种温度依赖性，验证了正向电流输运机制为与势垒高度不均匀分布相关的热电子发射机制。 The temperature dependence is explained by introducing the Gaussian distribution model of the potential barrier height, and the forwardcurrent transport mechanism is verified as the thermionic-emission mechanism related to the inhomogeneous distribution of the potential barrier height.
43645 以化学气相沉积 ( CVD) 方法在蓝宝石衬底上沉积一层较厚的 MoS2 膜作为前驱体，使用物理气相传输 ( PVT) 方法制备了层状 MoS2 薄膜。 A thicker MoS2 film deposited on a sapphire substrate by the chemical vapor deposition(CVD) method was used as a precursor, then the layered MoS2 films were prepared by the physical vaportransport (PVT) method.