ID 原文 译文
43626 在 3 英寸 ( 1 英寸= 2. 54 cm) 蓝宝石衬底上采用低损伤栅凹槽刻蚀技术制备了栅长为 0. 3 μm 的增强型 AlGaN/GaNHEMT。 The E-mode AlGaN/GaN HEMT with 0.3 μm gate-length was fabricated on the3 inch (1 inch = 2.54 cm) sapphire substrate by using low damage gate recess etching technique.
43627 所制 备 的 增 强 型 器 件 的 阈 值 电 压 为 0. 42 V，最 大 跨 导 为 401 mS /mm，导 通 电 阻 为2. 7 Ω·mm。器件的电流增益截止频率和最高振荡频率分别为 36. 1 和 65. 2 GHz。 The Emode device exhibits a maximum transconductance of 401 mS /mm, an on-resistance of 2.7 Ω·mm with a threshold voltage of 0.42 V, the current gain cut-off frequency of 36.1 GHz and the maximum oscillation frequency of the 65.2 GHz.
43628 在 10 GHz 下进行微波测试，增强型 AlGaN/GaN HEMT 的最大输出功率密度达到 5. 76 W/mm，最大功率附加效率为49.1%。 At 10 GHz, the E-mode AlGaN/GaN HEMT shows a maximum outputpower density of 5.76 W/mm and a peak power-added efficiency of 49.1%.
43629 在同一 材 料 上 制 备 的 耗 尽 型 器 件 最 大 输 出 功 率 密 度 和 最 大 功率附加效率分别为6.16 W/mm和 50. 2%。 The maximum output powerdensity and peak power added efficiency of the depletion-mode (D-mode) device fabricated on the samewafer are 6.16 W/mm and 50.2%, respectively.
43630 增强型器件的射频特性可与在同一晶圆上制备的耗尽型器件相比拟。 The ＲF characteristics of the E-mode device are comparable with those of the D-mode device that fabricated on the same wafer.
43631 锗外延片表面的雾、水印及点状缺陷等会影响太阳电池的性能和成品率，其中点状缺陷出现的比例最高。 The haze, watermarks and point defects on the surface of germanium epitaxial wafers willaffect the performance and yield of solar cells, among which the proportion of point defects is the highest.
43632 研究了锗抛光片清洗工艺对外延片表面点状缺陷的影响， The effect of cleaning process of Ge polished wafer on the point defects on the surface of the epitaxial wafer was studied.
43633 获得了无点状缺陷、低粗糙度及高表面质量的锗单晶片。 The Ge single crystal wafer with no point defects, low roughness and high surface qualitywas obtained.
43634 采用厚度为 175 μm p 型＜100＞锗单面抛光片进行清洗试验，研究了 SC－1 溶液的不同清洗时间、清洗温度和去离子水冲洗温度对锗抛光片外延后点状缺陷的影响， A p-type ＜100＞ Ge single side polished wafer with a thickness of 175 μm was used forcleaning experiment.The effects of different cleaning time and temperature of SC－1 solution, deionizedwater washing temperature on the point defects of the Ge epitaxial wafer after polishing were studied respectively.
43635 分析了表面 SiO2 残留和锗片表面粗糙度对外延片表面点状缺陷的影响。 The effects of residual SiO2 on the surface and the roughness of the Ge wafer surface on thepoint defects of the epitaxial wafer were analyzed.