ID 原文 译文
43616 针对脉冲发生器小型化的问题，将部分模块集成设计制作，优化布局，有效减少体积，减轻重量。 Aiming at the problem of miniaturization of the pulse generator, somemodules were integrated, designed and manufactured to optimize the layout, it effectively reduces thebulk and weight of the solid-state pulse generator.
43617 结果表明:其输出电压可达 3. 74 kV，脉冲前沿8.2 ns，在重复频率 200 Hz 条件下可以稳定工作。 The results show that the output voltage can reach 3.74 kV, the pulse front edge is 8.2 ns, and it can work stably at the repetition frequency of 200 Hz.
43618 研制出的脉冲发生器实现了较好的波形输出，为进一步实现固态脉冲源的小型化打下基础。 The developed pulse generator achieves a good output waveform, and lays a foundation for the miniaturization of the solid-state pulse source.
43619 对基于全耗尽绝缘体上硅 ( FDSOI) 的隧穿场效应晶体管 ( TFET) 器件和金属氧化物半导体场效应晶体管 ( MOSFET) 器件进行了总剂量 ( TID) 效应仿真， Total ionizing dose (TID) effects in both tunneling field effect transistor (TFET) andmetal oxide semiconductor field effect transistor (MOSFET) based on fully depleted silicon-on-insulator(FDSOI) were simulated.
43620 基于两种器件不同的工作原理，研究了总剂量效应对两种器件造成的电学影响，分析了辐照前后 TFET 和 MOSFET 的能带结构、载流子密度等关键因素的变化。 Based on the different working mechanisms of the devices, the electrical effectsof TID on the two devices were investigated, and changes of the key factors such as the energy bandstructure and carrier density of the two devices before and after radiation were analyzed.
43621 仿真结果表明:两种器件在受到较大辐射剂量时( 1 Mrad ( Si) ) ，TFET 受辐射引起的固定电荷影响较小，仍能保持较好的开关特性、稳定的阈值电压; The simulation results show that when the two devices were subjected to a large dose of radiation (1 Mrad (Si)) , theTFET is less affected by fixed charges caused by radiation and maintains good switching characteristicsand stable threshold voltage.
43622 而 MOSFET 则受固定电荷的影响较大，出现了背部导电沟道，其关态电流增加了几个数量级，开关特性发生了严重退化，阈值电压也严重地向负电压偏移。 On the other hand, the MOSFET is greatly affected by fixed charges, a backconductive channel appears in the MOSFET and the off-state current increases by several orders, thus theswitching characteristics seriously degrade and the threshold voltage greatly shifts to the negative direction.
43623 此外，TFET 的开态电流会随着辐照剂量的增加而减小，这与 MOSFET 的表现恰好相反。 In addition, the on-state current of the TFET decreases with the increase of the radiation dose, that iscontrary to the performance of the MOSFET.
43624 因此 TFET 比 MOSFET 有更好的抗总剂量效应能力。 Therefore TFETs have better immunity to the TID comparedto MOSFETs.
43625 研制了一款 X 波段增强型 AlGaN/GaN 高电子迁移率晶体管 ( HEMT) 。 An X-band enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor(HEMT) was developed.