ID 原文 译文
43596 结果表明:器件工作在给定的平均功率下，可以通过提高脉冲信号占空比和频率来改善器件的寿命和性能可靠性; The results show that under a certain average power condition, the lifetime and performance reliability of the devicecan be improved by increasing the duty cycle and frequency of the pulse signal.
43597 工作在给定的峰值功率下，可以通过降低脉冲占空比和提高脉冲频率来改善器件的寿命和性能可靠性。 When the device operatsunder a certain peak power condition, the lifetime and performance reliability of the device can be improved by reducing the pulse duty cycle and increasing the pulse frequency.
43598 沟道温度影响着半导体器件的寿命，因此，可以在器件能够承受的范围内通过改变脉冲占空比和脉冲频率来改善器件的寿命和性能可靠性。 The channel temperature affects the lifetime of the semiconductor device, therefore the lifetime and performance reliability of the device can be improved by varying the pulse duty cycle and pulse frequency within the range that the devicecan withstand.
43599 制备了 Al /Al2O3 /InP 金属氧化物半导体 ( MOS) 电容，分别采用氮等离子体钝化工艺和硫钝化工艺处理 InP 表面。 Al /Al2O3 /InP metal oxide semiconductor (MOS) capacitors were prepared, and InPsurfaces were treated by the nitrogen plasma passivation and sulfur passivation process, respectively.
43600 研究了在 150、200 和 300 K 温度下样品的界面特性和漏电特性。 Theinterface characteristics and leakage current of the samples were investigated at temperatures of 150, 200and 300 K.
43601 实验结果表明，硫钝化工艺能够有效地降低快界面态， The experimental results show that the fast interface states can be effectively reduced by thesulfur passivation process.
43602 在 150 K 下测试得到最小界面态密度为1.6×1010 cm－2·eV－1。 The minimum interface state density of 1.6×1010 cm－2·eV－1 is obtained at150 K.
43603 与硫钝化工艺对比，随测试温度升高，氮等离子体钝化工艺可以有效减少边界陷阱， Compared with the sulfur passivation process, the border traps can be effectively reduced by thenitrogen plasma passivation process with the increase of the test temperature.
43604 边界陷阱密度从 1. 1×1012 cm－2·V－1降低至 5. 9×1011 cm－2·V－1，同时减少了陷阱辅助隧穿电流。 The border trap densitydecreases from 1.1×1012 to 5.9×1011 cm－2·V－1, while the trap-assisted tunneling current is reduced.
43605 氮等离子体钝化工艺和硫钝化工艺分别在降低边界陷阱和快界面态方面有一定优势，为改善器件界面的可靠性提供了依据。 Nitrogen plasma passivation and sulfur passivation process have advantages in reducing border traps andfast interface states which provide a basis for improving the reliability of the device interface.