ID 原文 译文
43586 更倾向于与 Si 结合从而抑制 Ge 形成高价态， It is more inclined to combine with Si to inhibit the formation ofhigh valence states of Ge.
43587 这种选择性会随着时间的增加、功率的增高和温度的升高变得更加明显。 This selectivity becomes more obvious with the increase of time, power andtemperature, respectively.
43588 碳化硅 ( SiC) 具有宽禁带、高临界击穿电场、高热导率等优异特性，是制备高温、高频、大功率器件最理想的半导体材料之一。 Silicon carbide (SiC) is one of the most ideal semiconductor materials for thepreparation of high temperature, high frequency and high power devices due to its excellentcharacteristics such as wide band gap, high critical breakdown electric field and high thermal conductivity.
43589 然而，制备良好的 SiC 欧姆接触尤其是 p 型 SiC 欧姆接触仍然是 SiC 器件研制中亟需攻克的关键技术难题。 However, the fabrication of good ohmic contact to SiC especially to p-type SiC is still a key technicalissue in the development of SiC devices.
43590 首先对 p 型 SiC 欧姆接触的形成机制及金属/SiC 接触势垒理论进行了深入分析。 The formation mechanism of p-type SiC ohmic contact and theoryof metal /SiC contact barrier are analyzed firstly.
43591 然后，对近年来 p 型 SiC 欧姆接触的重要研究进展进行了综述，包括形成欧姆接触的金属体系，制备工艺条件，获得的比接触电阻率等，并重点讨论了p 型 SiC 欧姆接触的形成机理。 Then, the important research progress of p-type SiCohmic contact in recent years is reviewed, including the metal system, the preparation conditions, the obtained specific contact resistance.And the formation mechanism of the p-type SiC ohmic contact are discussed emphatically.
43592 最后，对未来 p 型 SiC 欧姆接触的研究方向进行了展望。 Finally, the future research directions of p-type SiC ohmic contact are prospected.
43593 研究了不同脉冲工作条件对 GaN 高电子迁移率晶体管 ( HEMT) 结温的影响， The effects of different pulse operating conditions on the junction temperature of GaNhigh electron mobility transistors (HEMTs) were analyzed.
43594 通过改变脉冲信号发生器的输出频率和占空比来改变器件的工作条件， The operating conditions of the device werechanged by changing the output frequency and duty cycle of the pulse signal generator.
43595 利用具备高空间分辨率的显微红外热像仪进行瞬态结温测试。 An infra scope thermal mapper with high spatial resolution was used to test the transient junction temperature.