ID 原文 译文
43576 利用金属氧化物半导体场效应晶体管 ( MOSFET) 的阈值电压与温度呈反比、热电压与温度呈正比的关系，通过电路结构设计与晶体管尺寸优化，获得一个与温度无关的基准电压。 According to the threshold voltage of the metal oxide semiconductor field effect transistor(MOSFET) inversely proportional to temperature, while its hot voltage proportional to temperature, atemperature-independent reference voltage was obtained through the proper circuit structure and the transistor size optimization.
43577 电路中的 MOSFET 偏置于工作电流极低的亚阈值区，从而有效降低了整个带隙基准电路的功耗。 The MOSFET operated in the subthreshold region with a very low workingcurrent, the power consumption of the whole designed bandgap reference circuit was effectively reduced.
43578 采用 CSMC 0. 18 μm CMOS 工艺，在 Aether 软件环境下完成了电路的仿真和版图设计。 With CSMC 0.18 μm CMOS process, the simulation and the layout design of the designed circuit werecompleted in Aether software.
43579 后仿真结果表明，室温下，电源电压为 3. 3 V 时，电路总电流为 81. 2 nA，输出基准电压为 1. 03 V，启动时间约为 0. 48 μs，功耗约为 268 nW，在－40 ～ 125 ℃ 的范围内温度漂移系数为 3. 2×10－5 /℃。 The post-simulation results show that at room temperature, when the powersupply voltage is 3.3 V, the total current of the circuit is 81.2 nA, the output reference voltage is 1.03 V, the startup time is about 0.48 μs, the power consumption is about 268 nW and the temperature drift coefficient is 3.2×10－5 /℃ in the range of －40～125 ℃.
43580 流片后在片测试结果表明，当电源电压在 1. 6～3. 3 V 之间变化时，电路输出电压稳定。 The on-wafer test results after being taped out show thatthe output voltage of the designed circuit is stable when the supply voltage varies from 1.6 V to 3.3 V.
43581 研究了不同条件的非原位 NH3 等离子体钝化对 Al2O3 /SiGe /Si 结构界面组分的影响。 Effects of different conditions of ex-situ NH3 plasma passivation on the interfacial component of Al2O3 /SiGe /Si structure were investigated.
43582 在 p 型 Si( 100) 衬底上外延一层 30 nm 厚的应变 Si0．7Ge0．3，采用双层 Al2O3 结构，第一层 1 nm 厚的 Al2O3 薄膜为保护层， A layer of strained-Si0.7 Ge0.3 with a thickness of30 nm was epitaxially grown on the p-type Si(100) substrate.A double-layer Al2O3 structure was adopted, the first Al2O3 film with a thickness of 1 nm was deposited as a protective layer.
43583 之后使用非原位 NH3 等离子体分别在 300 和 400 ℃ 下对 Al2O3 /SiGe 界面进行不同时间和功率的钝化处理，形成硅氮化物 ( SiNxOy ) 和锗氮化物 ( GeNxOy ) 的界面层。 After that, the interface of Al2O3 /SiGe was passivated to form an interface layer of SiNxOy and GeNxOy by using ex-situ NH3plasma with different time and power at 300 and 400 ℃, respectively.
43584 通过 X 射线光电子能谱 ( XPS) 分析表面的物质成分， X-ray photoelectron spectroscopy(XPS) was used to analyze components of the interface.
43585 结果表明 NH3 等离子体钝化在界面处存在选择性氮化， The results show that NH3 plasma treatment hasthe selective nitridation at the interface.