| ID | 原文 | 译文 |
| 43566 | 结果表明，采用该片内电源电路可实现宽输入电源范围、一定负载电流条件下的高精度 5 V 电源输出。 | The results show that the on-chip power supplycircuit in the DC-DC converter can achieve high precision 5 V power supply output with wide input powersupply range and a certain degree of load current. |
| 43567 | DC-DC 变换器芯片面积为 2. 00 mm×1. 20 mm，片内电源模块面积仅为 0. 60 mm×0. 40 mm。 | The area of the DC-DC converter chip is 2.00 mm×1.20 mm, and the area of the on-chip power module is only 0.60 mm×0.40 mm. |
| 43568 | 设计了一款 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 单片微波集成正电压控制开关。 | A GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithicmicrowave integrated positive voltage controlled switch was designed. |
| 43569 | 该电路设计采用片上集成隔直电容，对传统负电压控制开关的拓扑结构进行改进。 | The on-chip integrated isolated capacitance was adopted to improve the topology structure of the traditional negative voltage controlledswitch. |
| 43570 | 针对PHEMT 开关低频 ( 0. 1 GHz) 下 1 dB 压缩点输入功率 ( Pi( 1 dB) ) 陡降问题进行分析，提出了改进栅极输入阻抗的方法，有效提高了 PHEMT 开关低频下的 Pi( 1 dB) 。 | Based on the analysis of the steep drop of the 1 dB compression point input power (Pi(1 dB)) ofthe PHEMT switch at low frequency (0.1 GHz) , a method to improve the gate input impedance was proposed, which effectively improved the low frequency Pi(1 dB) of the PHEMT switch. |
| 43571 | 采用中国电子科技集团公司第十三研究所 0. 25 μm GaAs PHEMT 工艺进行了仿真和流片，芯片的面积为 1. 0 mm×1. 0 mm。 | Using the 0.25 μmGaAs PHEMT process of the 13th Ｒesearch Institute of CETC, the SPDT switch MMIC was simulated andfabricated with an area of 1.0 mm×1.0 mm. |
| 43572 | 测试结果表明，在频率为 0. 1～4 GHz 内，插入损耗小于 0. 8 dB，隔离度大于 42 dB，Pi( 1 dB) 大于15 dBm。控制电压为 0 V/5 V。 | The test results show that in the frequency range of 0.1－4 GHz, the insertion loss is less than 0.8 dB, the isolation is greater than 42 dB, the Pi(1 dB) is greaterthan 15 dBm. |
| 43573 | 该款 GaAs PHEMT 微波单片集成正电压控制开关设计全部达到了预期性能，并实现了改善低频下的 Pi( 1 dB) 的目标。 | The controlling voltage is 0 V /5 V. The design of the GaAs PHEMT monolithic microwavepositive voltage controlled switch achieves the desired performance and the goal of improving the low frequency Pi(1 dB) . |
| 43574 | 为满足可穿戴集成电路的低功耗应用需求，设计了一种自偏置全集成的带隙基准电压电路。 | A self-biased and fully integrated bandgap reference circuit was designed to meet theneeds of low-power applications for wearable integrated circuits. |
| 43575 | 该电路采用纯 CMOS 结构， | The designed circuit adopted a pureCMOS structure. |