ID 原文 译文
43526 该 CMOS 有源像素传感器 ( APS) 采用 0. 18 μm CMOS 工艺实现，阵列规模为 256×512， A CMOS active pixel sensor (APS) with 256 ×512 pixels was implemented by 0.18 μm CMOS technology.
43527 既可以像素全部输出，又可实现任意 p×q 像素合并读出。 The images could be acquired with full resolution as well as with any p×q sub-block binning.
43528 通过将信号处理电路转移到焦平面的方式，可大大降低后续图像处理的计算量，从而使系统降低了功耗并提高了处理效率。 By transferring this signal processing circuit to the focalplane, the computational load of downstream image processing can be greatly reduced and the treatmentefficiency can be obviously increased with low system power consumption.
43529 随着器件特征尺寸的缩小，半导体器件受到热载流子注入 ( HCI) 导致的损伤越来越小， With scaling down of the feature size of devices, semiconductor devices are less and lessdamaged by hot carrier injection (HCI) .
43530 采用常用的 I-V 测试方法很难获得其内部陷阱电荷的准确数据。 It is difficult to obtain accurate data of the internal trap chargeby using the common I-V test method.
43531 采用 I-V 测试和低频噪声测试相结合的方式，分析了65 nm 工艺 NMOS 器件 HCI 时的特性变化， With the combination methods of I-V test and low frequency noisetest, the characteristic changes of the n-channel MOSFETs in 65 nm technology during HCI were analyzed.
43532 采用低频噪声技术计算出 HCI 效应前后氧化层陷阱电荷和界面态陷阱电荷变化量，以及栅氧化层附近陷阱密度情况。 The changes of the oxide layer trap charge and the interface trap charge induced by HCI effect andtrap density near the gate oxide interface before and after HCI test were calculated by low frequency noisetechnology.
43533 通过 I-V 测试方法只能计算出 HCI 效应诱生的陷阱电荷变化量，对于其陷阱电荷的分布情况却无法计算， The changes of the trap charge induced by HCI effect can only be calculated by I-V test method, but the distribution of the trap charges can＇t be calculated.
43534 而相比于常用的 I-V 测试方式，低频噪声测试能更准确计算出随 HCI 后器件界面态陷阱电荷和氧化层陷阱电荷的具体数值及其 HCI 效应诱生变化值，并计算出氧化层附近的陷阱电荷空间分布情况。 Compared with the common I-V testmethod, the specific values of the interface trap charge and the oxide layer trap charge and the changevalues induced by HCI effect can be calculated accurately by using the low-frequency noise test afterHCI, and the spatial distribution of the trap charge near the oxide layer can also be calculated.
43535 利用传统电荷泵技术对三维立体器件界面缺陷特性进行了研究。 The interface defects characteristics of three-dimensional (3D) devices were studied bytraditional charge pumping technology.