ID 原文 译文
43506 结果表明，对于 A1( TO) 和 E1( TO) 振动模，在平行及垂直偏振配置下，其喇曼强度曲线的变化周期均为 π/2，相位差均为 π/4; The results show that forA1(TO) and E1(TO) vibration modes, the period of Ｒaman intensity curve is π/2, and the phase difference is π/4 in both parallel and vertical configurations.
43507 对于Ehigh2 振动模，在平行和垂直偏振配置下，其喇曼强度曲线的变化周期分别为 π 及 π/2。 For Ehigh2 vibration mode, the period of Ｒamanintensity curve is π in parallel configuration and π/2 in vertical configuration.
43508 通过喇曼选择定则及实验数据拟合分析得到 AlN 晶体各个振动模的喇曼张量比， According to the Ｒamanselection rules and data fitting, the Ｒaman tensor element ratio for different vibration modes of AlN crystalwere obtained.
43509 其 中，A1 ( TO) 、E1( TO) 和 Ehigh2 振动模的喇曼张量比为 ZnO 的 2 ～ 3 倍。 The Ｒaman tensor ratio of A1(TO) , E1(TO) and Ehigh2 vibration mode, is 2 to 3 times thatof ZnO.
43510 垂直偏振配置下，AlN 晶体的喇曼张量比远大于 4H-SiC 材料，为4 ～ 7 倍，表明 AlN 晶体具有更强的各向异性，为纤锌矿结构材料的各向异性研究提供依据。 In the vertical polarization configuration, the Ｒaman tensor ratio of AlN is 4 to 7 times that of 4HSiC, indicating that AlN has stronger anisotropic properties.
43511 研究了不同沉积温度下借助牺牲层 Ni 合成石墨烯的质量。 The results provide a further understanding ofthe anisotropy of wurtzite materials.
43512 在氧化铟锡 ( ITO) 玻璃表面先后蒸镀了厚度分别为 120 nm 的 Ta2O5 和 50 nm 的图形化 Ni， The quality of graphene synthesized by sacrificial layer Ni at different deposition temperatures was investigated.
43513 采用低温 ( 500，600 和700 ℃ ) 下的等离子体增强化学气相沉积 ( PECVD) 技术在 Ni 和绝缘层 Ta2O5 的界面处获得了大面积的图形化石墨烯薄膜。 120 nm Ta2O5 and 50 nm patterned Ni were successively deposited on the surfaceof indium tin oxide (ITO) glass.Large-area patterned graphene films were obtained at the interface between the Ni and the insulating layer Ta2O5 by plasma enhanced chemical vapor deposition (PECVD) atlow temperatures (500, 600 and 700 ℃) .
43514 去除 Ni 后，将图形化的石墨烯保留在绝缘衬底上， The patterned graphene was retained on the insulatingsubstrate after the Ni was removed.
43515 采用原子力显微镜 ( AFM) 和喇曼光谱对 3 种不同沉积温度下合成的石墨烯薄膜的表面形貌和质量进行了表征， The surface morphologies and qualities of the graphene films synthesized at three different deposition temperatures were characterized by atomic force microscope (AFM) andＲaman spectroscopy.