ID 原文 译文
43496 通过对弗伦克尔－普尔 ( FP) 发射、肖特基发射 ( SE) 和福勒－诺德海姆 ( FN) 隧穿等泄漏电流输运机制的分析表明，未辐照时 Al2O3 栅介质层的泄漏电流输运以 FP 发射和 FN 隧穿为主，而经 Si 离子辐照后的 Al2O3 栅介质层泄漏电流输运主要由 FP 发射引起，并不受 FN 隧穿的影响。 The analyses of leakage current transport mechanisms such as Frenkel-Poole (FP) emission, Schottky emission (SE) and Fowler-Nordheim (FN tunneling and so on show that the leakage current transport of the Al2O3 gate dielectric layer before irradiation is dominated by FP emission and FN tunneling, but is mainly caused by FP emission and is notaffected by FN tunneling for the post-irradiation case.
43497 研究结果还表明，辐照前后 Al2O3 栅介质层的泄漏电流输运机制与栅介质层厚度无关。 The studies also reveal that the leakage current transport mechanism of the Al2O3 gate dielectric layer before and after irradiation is independent of thethickness of the gate dielectric layers.
43498 采用高温存储 ( HTS) 试验、高温高湿存储试验 ( UHAST) 、高温高湿加电 ( THB)试验、微观组织分析和电路分析等方法，研究了 Au-Al-Si 系统在热应力、湿度、热电应力作用下的金属间化合物 ( IMC) 层特性及 Al-Si 界面行为。 The intermetallic compound (IMC) layer characteristics and Al-Si interfacial behavior of Au-Al-Si system under thermal stress, humidity and thermoelectric stress were studied by means of hightemperature storage (HTS) test, unbiased highly accelerated stress test (UHAST) , temperaturehumidity bias (THB) test, microstructural analysis and circuit analysis.
43499 结果显示，高温应力促进 IMC 层的增长，其增长厚度满足理论模型直至将键合区域 Al 层全部耗尽， The results show that the hightemperature stress promotes the growth of the IMC layer, and the thickness of the growth satisfies thetheoretical model until the Al layer is exhausted.
43500 且当 Au-Al 合金扩散至 Si 衬底时，在衬底中有一定的溶解度; When Au-Al alloy diffuses to Si substrate, it has a certain solubility in the substrate.
43501 湿度应力对 IMC 层厚度增长没有明显影响，但促进了 Au4Al 界面的电偶腐蚀，长期高温高湿环境会增加焊盘开路的风险; The humidity stress has no significant effect on the thickness of IMC layer, but it promotes the internal oxidation of Au4Al.The long-term high humidity environment will increase therisk of open failure.
43502 热电综合应力显著加速了 IMC 层的生长，且主要以焦耳热的形式影响 IMC 的生长。 The combined stress significantly accelerates the growth of IMC layer, and mainly affects the growth of IMC in the form of Joule heat.
43503 封装设计时除了考虑线承载电流通量和芯片散热问题外，还要注意引线承载的电流通量及通电时间作用下引起的焦耳热释放问题。 Therefore, the line flux by the current and heat dissipation should be considered in the package design, and the Joule heat issue caused by the current flux andthe time of the power on also should be considered.
43504 采用平行及垂直配置下的偏振散射装置，对物理气相传输 ( PVT) 法同质籽晶生长的六方 AlN 晶体进行偏振喇曼研究， Using the polarized scattering devices with parallel and vertical configurations, thepolarized Ｒaman study of the homogeneously grown hexagonal AlN crystal by the physical vapor transport(PVT) method was carried out.
43505 测量了激发光偏振方向与光轴成不同角度时各个振动模的偏振喇曼光谱，得到不同振动模式的喇曼信号强度变化。 The polarized Ｒaman spectra intensity of each vibration mode weremeasured when the polarization direction of the excited light was different from the optical axis, and theintensity changes of Ｒaman signals of different vibration modes were obtained.