ID 原文 译文
43486 采用金属系统物理气相传输 ( PVT) 法自发成核方式，生长获得长宽均大于 1 cm、厚度为毫米量级的 m 面 AlN 单晶块体。 The m-plane AlN single crystals grown by spontaneous nucleation with length and widthgreater than 1 cm and thickness in millimeter scale were obtained by using metal system physical vaportransport (PVT) method.
43487 通过对不同 m 面 AlN 单晶生长宏观形貌、微观表面的测试分析，初步可判定其生长存在单核生长和多核生长两种模式。 Two modes of mononuclear growth and multinuclear growth were determined bythe test and analysis of macroscopic and microscopic surface of different m-plane AlN single crystals.
43488 并将 m 面 AlN 晶体生长过程分为 3 个阶段，分别为生长中心形成阶段、生长阶段和生长台阶并组阶段。 The growth process form the m-plane AlN crystal can be divided into three stages, which were the growth center formation stage, the growth stage and the growth step combination stage.
43489 第一性原理计算表明，每生长一层 ( 4 个) Al-N 基元的 m 面和 c 面 AlN 晶体释放的能量分别为 2. 76 eV 和 8. 64 eV， The first-principles calculations show that the energies released from the m-plane and c-plane AlN crystals (a layer of four Al-Nprimitives) are 2.76 eV and 8.64 eV, respectively.
43490 通过对衬底厚度的调节可以初步控制 m 面 AlN 晶体的成核概率。 The nucleation probability of the m-plane AlN crystalcan be controlled by the adjustment of the substrate thickness.
43491 以此为依据进行 m 面 AlN 单晶接长实验，获得了 12 mm×20 mm 尺寸的 m 面 AlN 单晶，最大厚度达 5 mm， Based on this, the m-plane AlN singlecrystal extension experiment was carried out, and an m-plane AlN single crystal with the size of 12 mm×20 mm was obtained with a maximum thickness of 5 mm.
43492 为进一步籽晶生长和器件制备提供技术及理论基础。 Meanwhile, this experiment provided the technical and theoretical basis for seed crystal growth and devices preparation
43493 基于 Al /Al2O3 /Si 金属氧化物半导体 ( MOS) 电容结构研究了 30 MeV Si 离子辐照前后 Al2O3 栅介质的泄漏电流输运机制。 The leakage current transport mechanism of Al2O3 gate dielectric before and after30 MeV Si ion irradiation was studied based on Al /Al2O3 /Si metal oxide semiconductor (MOS) capacitorstructure.
43494 研究结果表明，相较于辐照前，Si 离子辐照在栅介质层引起的正电荷俘获导致 Al2O3 与 Si 衬底界面处的势垒高度降低， The research results show that compared with the pre-irradiation case, the positive charge trapping caused by Si ion irradiation in the gate dielectric layer leads to a decrease in the barrier height at theinterface between the Al2O3 and the Si substrate.
43495 使辐照后 Al2O3 栅介质层的漏电流随着 Si 离子注量的增加而增加。 After irradiation, the leakage current of Al2O3 gate dielectric layer increases with the increase of Si ion fluence.