| ID | 原文 | 译文 |
| 43476 | 该方法有力地保证了大信号测试中数据的一致性，可广泛应用于器件建模和电路设计等领域。 | The proposed method effectivelyguarantees the consistency of data in large signal measurement, hence can be widely applied in devicemodelling and circuit design. |
| 43477 | InP 双异质结双极晶体管 ( DHBT) 由于优异的频率和相位噪声特性被广泛应用于高品质压控振荡器 ( VCO) 芯片的研制。 | InP double heterojunction bipolar transistors (DHBTs) are widely used in the development of high performance voltage controlled oscillator (VCO) chips due to their excellent frequency andphase noise characteristics. |
| 43478 | 研究了影响 InP DHBT 相位噪声特性的因素， | The factors affecting the phase noise characteristics of InP DHBTs were studied. |
| 43479 | 并从器件结构和 SiN 钝化层两方面对器件进行了优化设计。 | The device was optimized from two aspects of device structure and SiN passivation layer. |
| 43480 | 详细介绍了附加相位噪声的测试原理和方法， | The principle and method of the additive phase noise measurement were introduced in detail. |
| 43481 | 并提出了一种改进的 “正交鉴相”在片测量系统， | And an improved onchip measurement system in quadrature phase detection technique was presented. |
| 43482 | 测得所制作的 InP DHBT 的附加相位噪声在100 kHz偏移频率时达到－144 dBc /Hz。 | The test result showsthat the additive phase noise of the proposed InP DHBT is －144 dBc /Hz at 100 kHz offset frequency. |
| 43483 | 基于此 InP DHBT 工艺设计并实现了一款 47 GHz 差分VCO 单片微波集成电路 ( MMIC) ， | A47 GHz differential VCO monolithic microwave integrated circuit (MMIC) was designed and fabricatedbased on the proposed InP DHBT process. |
| 43484 | 测试结果显示 1. 2 GHz 调谐带宽内该 VCO 的典型单端输出功率为－3. 8 dBm，单电源－5 V 工作时的电流为 23 mA， | Measurement results show that the presented VCO obtains atypical single-side output power of －3.8 dBm in 1.2 GHz tuning bandwidth, and the current is 23 mAat －5 V single supply power. |
| 43485 | 在 100 kHz 偏移频率时的相位噪声达到－87 dBc /Hz，验证了文中所研制的 InP DHBT 优异的相位噪声特性。 | The phase noise of －87 dBc /Hz is achieved at 100 kHz offset frequency, which confirms the perfect InP DHBT phase noise performance. |