ID 原文 译文
43436 升温下，粗糙界面能量释放率总体上呈现出先增大后减小的变化趋势。 Under the heating condition, theenergy release rates interface generally increase first and then decrease along the rough interface.
43437 在平片蓝宝石衬底上，通过引入 AlN 缓冲层，优化成核层与粗糙层的生长条件，生长出了表面平整的 GaN 薄膜，晶体质量得到显著提升。 By introducing an AlN buffer layer and optimizing the growth conditions of the nucleationlayer and rough layer, GaN films with smooth surface morphology were grown on plane sapphire substrates, and the crystal quality was significantly improved.
43438 通过引入 AlN 缓冲层，将 X 射线衍射( XＲD) 下样品 ( 002) 面的半高宽 ( FWHM) 由 232″降低至 148″; The full width at half maximum (FWHM) ofthe (002) plane of the sample under X-ray diffraction (XＲD) is decreased from 232″ to 148″ by introducing an AlN buffer layer.
43439 通过减薄成核层厚度、提升粗糙层生长压力，将样品 ( 102) 面和 ( 100) 面的 FWHM 分别由 243″和 283″降低至 169″和221″。 By reducing the thickness of the nucleation layer and increasing the growth pressure of the rough layer the FWHMs of (102) plane and (100) plane of the sample are decreased from243″ and 283″ to 169″ and 221″, respectively.
43440 研究了不同成核层和粗糙层的生长参数对 GaN 薄膜表面形貌的影响， The effects of growth parameters of different nucleationlayers and rough layers on the surface morphology of GaN films were studied.
43441 随着 ( 102) 面和( 100) 面 FWHM 的降低，表面平整度亦得到改善，粗糙度由约 3. 8 nm 下降到约 1. 6 nm。 The surface morphologiesget smoother and the roughness is decreased from about 3.8 nm to about 1.6 nm with the reduction ofFWHMs of the (102) plane and (100) plane.
43442 利用优化后的底层条件生长了高质量 GaN 薄膜，在 3. 5 A/mm2 电流密度下，与参考样品相比，制备出的 LED 样品的光输出功率由 863 mW 提升至 942 mW，提升了约 9%。 High quality GaN films were grown by using the optimizedunderlying conditions.At 3.5 A/mm2 current density, the optical output power of the prepared LED samples is increased from 863 mW to 942 mW compared with the reference sample, which is an increase ofabout 9%.
43443 通过高温热解法和化学气相沉积 ( CVD) 法在 SiC ( 0001) 衬底外延石墨烯。 Graphene was epitaxially grown on SiC (0001) substrates by the high temperature thermal decomposition method and chemical vapor deposition (CVD) method.
43444 采用光学显微镜、原子力显微镜、扫描电子显微镜、喇曼光谱、X 射线光电子能谱和霍尔测试系统对样品进行表征， The samples were characterized by the optic microscope, atomic force microscope, scanning electron microscope, Ｒamanspectroscopy, X-ray photoelectron spectroscopy and Hall test system.
43445 并对比了两种不同生长方法对石墨烯材料的影响以及不同的成核机理。 The influences of two different growth methods on graphene materials and different nucleation mechanisms were compared.