ID 原文 译文
43426 管芯传输线脉冲 ( TLP) E-SOA 测试结果表明，优化后的版图使 NLDMOS 在 5 V 工作电压下 TLP E-SOA 提升约 30%，金属引线的加宽和叠加使 NLDMOS 的开态电流提升约 7%。 The transmission line pulse (TLP) E-SOAtest results show that the optimized layout improves the TLP E-SOA of the NLDMOS by about 30% at theoperating voltage of 5 V, and the widening and stack of the metal leads increase the on-state current ofthe NLDMOS by about 7%.
43427 带状紧凑型 p+带且双栅极嵌入的优化版图设计能更好地稳定硅衬底电位，抑制寄生三极管的开启，增大 E-SOA，提高器件可靠性。 The strip-shaped compact-type p+ band and dual-gate fingers embedded optimized layout design can better stabilize the silicon substrate potential, suppress the opening of the parasitic transistor, increase the E-SOA, and improve the reliability of the device.
43428 因此，版图设计优化对提升功率 NLDMOS 的性能和可靠性具有实际意义。 Therefore, layout design optimization has practical significance for improving the performance and reliability of the power NLDMOS.
43429 硅通孔 ( TSV) 结构是三维互连封装的核心， Through silicon via (TSV) is the key structure in three dimensional interconnected packaging.
43430 针对其热可靠性问题，基于 ANSYS 有限元分析软件分别构建光滑和粗糙两种界面形貌的 TSV 结构分析模型， Aiming at the thermal reliability, the TSV structure analysis models with smooth and rough interface morphologies were established based on ANSYS finite element analysis software.
43431 模拟计算了两种界面下TSV 结构的热应力和界面分层裂纹尖端能量释放率，通过对比分析研究了界面粗糙度对 TSV 结构界面分层的影响。 And the thermal stresses and the energy release rates at interface delamination crack tips in the TSV structure were alsosimulated and calculated, respectively.Through the comparison and analysis, the effects of interfaceroughness on interface delamination of the TSV structure were studied.
43432 结果表明，温度载荷下粗糙界面上热应力呈现出明显的周期性非连续应力极值分布， The results show that obvious periodically discontinuous stress extreme points appear along the rough interface under the temperature load.
43433 且极值点位于粗糙界面尖端点。 These stress extreme points almost locate at the convex points of the rough interface.
43434 界面分层裂纹尖端能量释放率也呈周期性振荡变化。 And the energy release rates at the convex points of the rough interface also change periodically along the rough interface.
43435 降温下，粗糙界面尖端点附近能量释放率明显大于光滑界面稳态能量释放率; Under the cooling condition, the energy release rates near the convex points of the rough interface are significantly greater than that of the steady state on the smooth interface.