ID 原文 译文
43406 芯片尺寸为 1. 6 mm×0. 6 mm×0. 1 mm。 The attenuator chip size is 1.6 mm×0.6 mm×0.1 mm.
43407 该电路具有响应速度快、功耗低、面积小、衰减附加相移小等优点，可广泛应用于通信设备和微波测量系统中。 The circuit has the advantages offast response, low power consumption, small area, small attenuation additional phase shift, and can bewidely used in communication equipment and microwave measurement systems.
43408 通过电化学工作站对 4 英寸 ( 1 英寸= 2. 54 cm) n 型单晶 SiC ( 4H-SiC) 进行电化学腐蚀特性研究，采用 36GPAW－TD 单面抛光机对其 Si 面和 C 面进行了化学机械抛光 ( CMP) 。 The electrochemical corrosion characteristics of the 4 inch (1 inch = 2.54 cm) n-typesingle crystal SiC (4H-SiC) were studied by the electrochemical workstation, and the 36GPAW－TD single side polisher was used in the chemical mechanical polishing (CMP) of the Si-and C-face of SiC, respectively.
43409 结果表明，采用 H2O2 和 NaClO 作为氧化剂，均可促进 SiC 的电化学腐蚀并提高其抛光去除速率，其促进作用与氧化剂浓度和抛光液的 pH 值密切相关。 The results show that the use of H2O2 and NaClO as oxidants can promote the electrochemical corrosion of SiC and improve its polishing removal rate.The promotion is closely related to the concentration of the oxidant and the pH value of the slurry.
43410 选择含体积分数 5%的 H2O2、pH 值为 12的 SiO2 抛光液对 SiC 进行 CMP，得到的 Si 面抛光速率可以达到 285. 7 nm /h。 The Si surface polishing rate of SiC obtained by CMP ofSiO2 slurry with a volume fraction of 5% H2O2 and a fixed pH value of 12 can reach 285.7 nm /h.
43411 在含 H2O2 抛光液中引入适量的 NaNO3 和十二烷基硫酸钠，SiC 表现出较高的腐蚀电位绝对值和去除速率。 The introduction of an appropriate amount of NaNO3 and sodium lauryl sulfate in the H2O2 slurry contributes to ahigh absolute value of corrosion potential and removal rate of SiC.
43412 在H2O2 和 NaClO 抛光液体系中，SiC 的去除速率与其腐蚀电位的绝对值正相关，该结果对实际应用有一定的借鉴意义。 In the H2O2- and NaClO-based slurrysystem, the removal rate of SiC is positively correlated with the absolute value of the corrosion potential, which has certain guiding significance in practical applications.
43413 氮化铝 ( AlN) 因具备优良的理化性能，目前已被广泛应用于微电子及半导体器件的基板和封装领域中，同时在功率器件、深紫外 LED 及半导体衬底方面也具有广阔发展前景。 Aluminum nitride (AlN) has been widely used in the field of substrates and packaging ofmicroelectronics and semiconductor devices due to its excellent physical and chemical properties.And ithas broad prospects in power devices, deep ultraviolet LEDs and semiconductor substrates.
43414 AlN粉体作为 AlN 产品的主要原料是决定其性能的关键因素。 As the mainraw material of AlN products, AlN powder is the key factor in determining its performance.
43415 在对 AlN 的结构与性能综合分析基础上，系统介绍了当前 AlN 粉体制备技术的研究进展和应用现状，同时对各制备工艺的特点进行了分析探讨。 Based on thecomprehensive analysis of the structure and properties of AlN, the research progress and application statusof the current preparation technology of AlN powder are systematically introduced, and the characteristicsof each preparation process are analyzed and discussed.