ID 原文 译文
43386 采用高侧驱动 p 型 MOSFET 的应用架构，从而去除了电荷泵式结构; The application architecture of highside drive p-MOSFET was adopted to remove the charge pump structure.
43387 并引入分时电控结构，减少了外围元件。 And the time-sharing currentcontrol structure was introduced to reduce external components.
43388 基于 0. 5 μm BCD 工艺设计了一款半桥式调制驱动器芯片， A half-bridge modulation driver chipbased on the 0.5 μm BCD process was designed.
43389 测试结果表明，采用该技术的半桥驱动器芯片，在没有外接电容的情况下，驱动能力可达 400 mA， The test results show that the half-bridge driver chipusing these technologies can drive up to 400 mA without external capacitors.
43390 负载电容 1 nF 时，驱动信号上升沿和下降沿均小于 100 ns，能够满足大多数小体积应用需求，具有极好的应用适应性。 The rising and falling edgesof the driving signal are both less than 100 ns when the load capacitance is 1 nF.It can meet the needs ofmost small volume applications and has excellent application adaptability.
43391 为满足宽带系统中低噪声放大器 ( LNA) 宽带的要求，采用 0. 15 μm GaAs 赝配高电子迁移率晶体管 ( PHEMT) 工艺，设计了两款 1 MHz ～ 40 GHz 的超宽带 LNA，分别采用均匀分布式放大器结构及渐变分布式放大器结构，电路面积分别为 1. 8 mm × 0. 85 mm 和 1. 8 mm ×0. 8 mm。 In order to meet the broadband requirements of lownoise amplifiers (LNAs) inbroadband systems, two ultra-wideband LNAs from 1 MHz to 40 GHz were designed with 0.15 μm GaAspseudomorphic high electron mobility transistor (PHEMT) process.The uniform distributed amplifierstructure and the tapered distributed amplifier structure were adopted respectively with the circuit areas of1.8 mm×0.85 mm and 1.8 mm×0.8 mm, respectively.
43392 电磁场仿真结果表明，1 MHz ～ 40 GHz 频率范围内，均匀分布式 LNA 增益为15.3 dB，增益平坦度为 2 dB，噪声系数小于 5. 1 dB; The electromagnetic field simulation results showthat in the frequency range of 1 MHz to 40 GHz, the uniform distributed LNA has a gain of 15.3 dB, again flatness of 2 dB and a noise figure of less than 5.1 dB;
43393 渐变分布式 LNA 增益为 14. 16 dB，增益平坦度为1.74 dB，噪声系数小于 3. 9 dB。 and the tapered distributed LNA has a gainof 14.16 dB, a gain flatness of 1.74 dB, and a noise figure of less than 3.9 dB.
43394 渐变分布式 LNA 较均匀分布式 LNA，显著地改善了增益平坦度、噪声性能和群延时特性。 Compared with the uniform distributed LNA, the tapered distributed LNA significantly improves the gain flatness, noise performance and group delay characteristics.
43395 设计了一种输出电流范围在 0～2 mA，用于驱动垂直腔面发射激光器 ( VCSEL) 的恒流源电路。 A constant current source circuit with an output current range of 0－2 mA for driving avertical cavity surface emitting laser (VCSEL) was designed.