ID 原文 译文
43366 实验结果对于促进国产陶瓷封装倒装焊器件的实际应用具有重要意义。 The conclusions have significantmeaning for improving the practical application of domestic ceramic flip-chip devices.
43367 通过两步水热法在氟掺杂 SnO2 ( FTO) 玻璃衬底上制备出了不同退火温度的 TiO2 /ZnO 复合纳米棒， TiO2 /ZnO composite nanorods annealed at different temperatures were prepared on fluorine-doped tin oxide (FTO) glass substrates by the two-step hydrothermal method.
43368 分别利用 X 射线衍射、扫描电子显微镜、喇曼光谱和光致发光谱等手段对不同退火温度下的 TiO2 /ZnO 复合纳米棒的表面形貌、微观结构以及光学性能进行了研究。 The surface morphology, microstructure and optical properties of TiO2 /ZnO composite nanorods annealed at different temperatures were studied by means of X-ray diffraction, scanning electron microscope, Ｒaman spectroscopy andphotoluminescence spectroscopy, respectively.
43369 结果表明，当退火温度从 400 ℃ 逐渐升高至 425 ℃ 时，TiO2 /ZnO 复合纳米棒变得致密、均匀，表现为六方纤锌矿结构，同时复合纳米棒结晶性能良好且缺陷少; The results show that when the annealing temperature isgradually increased from 400 ℃ to 425 ℃, the TiO2 /ZnO composite nanorods become dense and uniform, and exhibit a hexagonal wurtzite structure, and the composite nanorods have excellent crystallinityand few defects.
43370 当退火温度高于 425 ℃ 时，TiO2 /ZnO 复合纳米棒变得稀疏，缺陷较多，结晶质量降低。 When the annealing temperature is higher than 425 ℃, TiO2 /ZnO composite nanorodsbecome sparse with more defects and lower crystal quality.
43371 喇曼光谱和光致发光谱测试表明，当退火温度为 425 ℃时，TiO2 /ZnO 复合纳米棒的紫外发光峰强度高，蓝移明显，激发的紫外光波长达到 365. 414 nm。 Ｒaman spectroscopy and photoluminescencespectroscopy show that when the TiO2 /ZnO composite nanorod annealed at 425 ℃, the intensity of the ultraviolet luminescence peak is high, the blue shift is obvious, and the wavelength of the excitedultraviolet light reaches 365.414 nm.
43372 为获得某星载专用集成电路 ( ASIC) 控制运算芯片在轨单粒子翻转率，开展了不同线性能量传递 ( LET) 值重离子辐照试验， In order to obtain the on-orbit single event upset rate of the application specific integrated circuit (ASIC) control computing chip used on satellite, heavy ion irradiation experiments with differentlinear energy transfer (LET) values were carried out.
43373 并根据试验结果量化评估了该芯片抗单粒子翻转效应性能并获得了单粒子翻转截面。 Based on the experimental results, anti-single eventupset effect of the ASIC chip was quantitatively evaluated and the single event upset section was obtained.
43374 试验结果表明不带检错纠错 ( EDAC) 功能的 ASIC 芯片静态随机存取存储器 ( SＲAM) 区单粒子翻转阈值低于 1. 7 MeV·cm2·mg－1，并随着重离子 LET 值增加，单粒子翻转位数迅速上升; Experimental results show that the single event upset threshold of the ASIC chip SＲAM region without error detection and correction (EDAC) function is lower than 1.7 MeV·cm2·mg－1, and the single eventupset number increases rapidly with the increase of the heavy ion LET value.
43375 带 EDAC 功能的 ASIC 芯片的单粒子翻转阈值为 3. 7 MeV·cm2·mg－1。 The single event upsetthreshold of the ASIC chip with EDAC function is 3.7 MeV·cm2·mg－1.