ID 原文 译文
43356 采用 X 射线衍射仪、喇曼光谱仪、扫描电子显微镜和紫外－可见分光光度计等表征手段，分析 CuSbS2 薄膜的结晶性、物相结构、微观形貌和光学性能。 The crystallinity, phase structure, microscopicmorphologies and optical properties of the CuSbS2 thin films were characterized by X-ray diffractometer, Ｒaman spectroscopy, scanning electron microscope and ultraviolet-visible spectrophotometer.
43357 结果表明，所制备的薄膜为硫铜锑矿结构的 CuSbS2 ; The results demonstrate that the prepared films were chalcostibite CuSbS2 .
43358 较低硫化气压可以提高薄膜的结晶性能，但低压下制得的 CuSbS2 薄膜表面孔洞较多。当硫化气压由 10 kPa 升至 30 kPa 时，制备的 CuSbS2 薄膜的吸收系数降低; The crystallization property of CuSbS2 thinfilms can be improved under low sulfurization pressure, but have more voids on the surface.
43359 硫化气压由 50 kPa 升至 70 kPa 时，薄膜吸收系数升高，在可见光范围内，吸收系数均大于 104 cm－1。 The absorption coefficient of the prepared CuSbS2 film, over 104 cm－1 in the visible light region, declines as the sulfurization pressure increases from 10 kPa to 30 kPa, then increases as the sulfurization pressure increasesfrom 50 kPa to 70 kPa.
43360 薄膜的禁带宽度最大为 1. 47 eV，与太阳光谱匹配。 The largest band gap of the thin film is 1.47 eV, which matches up with the solarspectrum.
43361 陶瓷封装倒装焊器件在应用过程中往往面临大温差、湿热、高温等外部环境， Ceramic flip-chip devices are often applied in external environments such as large temperature difference, damp heat and high temperature.
43362 为了满足其应用要求，必须进行充分的热学环境可靠性评估。 In order to meet the application requirements, adequate reliability assessment in thermal environment is necessary.
43363 以陶瓷封装菊花链倒装焊器件为研究对象，进行温度循环、强加速稳态湿热 ( HAST) 、高温存储等考核试验， The ceramic daisy chain flip-chipdevices were adopted for tests of temperature-cycling, highly accelerated temperature and humidity stresstest (HAST) and high-temperature storage.
43364 并通过超声扫描 ( C?SAM) 、电子扫描显微镜 ( SEM) 检测等手段对器件底部填充胶以及焊点界面生长情况进行分析。 C-mode scanning acoustic microscope (C-SAM) andscanning electron microscope (SEM) were used to analyze the underfill and interface growth of solderjoints.
43365 结果表明:未经底部填充的器件在经历 200 次温度循环后发生失效;底部填充器件在经历3 000 次温度循环、792 h HAST 以及 1 000 h 高温存储后，电通断测试以及超声扫描合格。 The results show that devices without underfill failed after 200 times of temperature-cycling, anddevices with underfill passed continuity test and C-SAM after 3 000 times of temperature-cycling, 792 hours of HAST and 1 000 hours of the high-temperature storage.