ID |
原文 |
译文 |
43346 |
有机-无机钙钛矿薄膜作为有机发光二极管中的发光层, |
The organic-inorganic perovskite thin film is used as a light-emitting layer in an organiclight-emitting diode. |
43347 |
其本身的薄膜质量与热稳定性是影响其发光特性的主要因素。 |
The quality and thermal stability of the film are main factors that affect its light-emitting characteristics. |
43348 |
采用一步溶液法制备了蓝光发射 MAPbClxBr3-x薄膜, |
MAPbClxBr3-x thin films with blue light emission were prepared by one-step solution method. |
43349 |
并通过光学显微镜、吸收光谱、光致发光 ( PL) 谱等分析手段研究了薄膜的成膜质量与不同 Cl /Br 摩尔比之间的关系,以及无机 Cs 离子掺杂对薄膜热稳定性与发光特性的影响。 |
The relationship between the film quality and the molar ratio of Cl /Br and the effect of inorganic Cs ion doping on thermal stability and luminescence of thin films were studied by means of optical microscopy, absorption spectroscopy and photoluminescence (PL) spectrum. |
43350 |
实验结果表明:随着Cl /Br 摩尔比的增大,晶粒尺寸逐渐增大;Cs 离子掺杂可以提高薄膜的覆盖度、光吸收强度、热稳定性及 PL 强度; |
The experimental results showthat the grain size increases gradually with the increase of Cl /Br molar ratios.Cs ion doping can improvethe film coverage, light absorption intensity, thermal stability and PL intensity. |
43351 |
通过调节 Cl /Br 摩尔比及 Cs 离子掺杂获得了室温下具有蓝色发光波长435 nm的 Cs0. 1MA0. 9PbCl2.375Br0.625薄膜。 |
At room temperature, Cs0.1MA0.9PbCl2.375Br0.625 thin film with blue light emission wavelength of 435 nm was obtained by adjusting Cl /Br molar ratio and Cs ion doping. |
43352 |
MAPbClxBr3-x薄膜与 Cs0. 1MA0. 9PbCl2.375Br0.625薄膜的发光机制主要为激子辐射复合。 |
The luminescence mechanism of MAPbClx Br3-x film an Cs0.1MA0.9PbCl2.375Br0.625 film are mainly exciton radiative recombination. |
43353 |
此外,Cs0. 1MA0. 9PbCl2.375Br0.625薄膜还存在 Cs 离子掺杂能级参与的辐射复合机制。 |
In addition, theCs0.1MA0.9PbCl2.375Br0.1MA0. 9PbCl2.375Br0.625 film also has a radiative recombination mechanism involving Cs ion doping level. |
43354 |
CuSbS2 是一种良好的太阳电池吸收层材料,其组成元素毒性低且地球储量比较丰富。 |
CuSbS2 is a good material used for absorbing layer of solar cells.Its constituents are oflow toxicity and abundant on the earth. |
43355 |
采用溶胶-凝胶法制备 CuSbS2 薄膜,为了去除薄膜中的氧化物并提高薄膜质量,对薄膜进行了硫化处理。 |
CuSbS2 thin films were prepared by sol-gel method, and sulfurizedto remove oxide in films and improve the quality of films. |