| ID | 原文 | 译文 |
| 43336 | 针对 1 200 V/200 A SiC 模块，利用仿真软件建立了有限元分析模型，研究了模块封装工艺与模块热电特性的关系，包括焊层厚度、空洞率及键合参数对模块热特性和寄生参数的影响。 | The finite element analysis model was established for the 1 200 V/200 A SiC module by using the simulation software.The relationship between the module packaging process and the thermoelectric properties of the module was studied, which includes the influence of thickness of the solder layer, voidage and bonding parameters onthe thermal properties and parasitic parameters of the module. |
| 43337 | 结合仿真结果和实测数据得出焊层厚度 0. 18 mm、键合线直径 15 mil ( 1 mil = 25. 4 μm) 、线间距0. 3 mm 时模块热阻和电特性较理想。 | Combined with simulation results andmeasured data, it is concluded that the ideal thermal resistance and electrical properties of the module areobtained when choosing a welding layer thickness of 0.18 mm, a bonding wire diameter of 15 mil(1 mil = 25.4 μm) and a wire spacing of 0.3 mm. |
| 43338 | 其热阻为 0. 266 ℃ /W，寄生电感为 18. 159 nH，模块阈值电压小于 1. 9 V，导通电阻约为 6. 5 mΩ。 | The thermal resistance is 0.266 ℃ /W, the parasiticinductance is 18.159 nH, the threshold voltage of the module is less than 1.9 V, and the on-resistanceis about 6.5 mΩ. |
| 43339 | 提出了一种交叉结构高增益的两级运算跨导放大器 ( OTA) 电路， | A high gain two-stage operational transconductance amplifier (OTA) circuit with thecross-structure was proposed. |
| 43340 | 第一级采用 PMOS差分输入方式，降低电路的噪声和功耗， | The first stage adopted PMOS differential input mode to reduce the noiseand power consumption of the circuit. |
| 43341 | 第二级为采用推挽结构的共源增益级，提供增益并降低静态电流。 | The second stage was the common-source gain stage circuit withpush-pull structure to provide gain and reduce quiescent current. |
| 43342 | 为进一步提高电路的电压增益，将对管输入变为四管输入，并利用一对有源电流镜与之相匹配，通过交叉耦合方式连接到差分输入管，从而提高电路的跨导。 | In order to improve the voltage gain ofthe circuit further, two transistors input was changed into four transistors input, and a pair of active current mirrors which was connected to the differential input transistors through cross-coupling was used tomatch it, so that the transconductance of the circuit was improved. |
| 43343 | 采用阻尼因子控制模块作为频率补偿结构，提高电路稳定性。 | In addition, the damping factor controlmodule was used as the frequency compensation structure to improve the circuit stability. |
| 43344 | 基于 SMIC 0. 13 μm 工艺对提出的 OTA 电路进行仿真验证，仿真结 果 表 明: | The proposed OTAcircuit was validated based on SMIC 0.13 μm process. |
| 43345 | 该 电 路 在 3. 3 V 供 电 电 压 下，负 载 为 5 pF 电 容 时，直流开环增益为102.7 dB，单位增益带宽为 2. 845 MHz，共模抑制比为 133. 34 dB，电源抑制比为 86. 1 dB，等效输入参考噪声为 48. 28 nV/槡Hz@ 100 kHz。 | Simulation results indicate that while the amplifieroperates at 3.3 V supply voltage and 5 pF load capacitance, it has the DC open-loop gain of 102.7 dB, the unity-gain bandwidth of 2.845 MHz, the common mode rejection ratio of 133.34 dB, the power supplyrejection ratio of 86.1 dB and the equivalent input reference noise of 48.28 nV/槡Hz@ 100 kHz. |