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43326 测试结果表明，在 18 ～ 26 GHz 频率内，最大调幅深度大于 27 dB，插入损耗小于 8. 1 dB，输入电压驻波比小于 1. 3 ∶ 1，输出电压驻波比小于1.5 ∶ 1。 The measurement results show that in the frequency range of 18－26 GHz, the maximum depth of the amplitude modulation islarger than 27 dB, the insertion loss is less than 8.1 dB, input voltage standing wave ratio (VSWＲ) isless than 1.3 ∶ 1, output VSWＲ is less than 1.5 ∶ 1.
43327 平衡式矢量调制器 MMIC 尺寸为 2. 4 mm×2. 5 mm，该电路具有插入损耗小、芯片尺寸小、功耗低等特点，可广泛应用于数字通信系统中。 The size of the balanced vector modulator MMIC is2.4 mm×2.5 mm.The MMIC has the characteristics of small insertion loss, small chip size and lowpower consumption, and could be wildly used in the digital communication applications.
43328 研发了一款 W 波段四通道接收前端微波单片集成电路 ( MMIC) 。 A four-channel receiver front-end monolithic microwave integrated circuit (MMIC) composed of low noise amplifiers (LNAs) , mixers and local oscillator power dividers was designed and fabricated.
43329 该接收前端包括低噪声放大器、混频器和本振功分电路。 The LNA uses five-stage common-source amplifier topology, and the mixer uses field effect transistorfor resistive third harmonic mixing.
43330 低噪声放大器采用五级共源放大拓扑，混频器采用场效应晶体管进行阻性三次谐波混频;通道之间采用电阻隔离，以抑制信号泄露。 The resistor isolation could depress the signal leakage between channels.
43331 对低噪声放大器和谐波混频器两个关键电路进行了设计和仿真，接收前端芯片面积为5.50 mm×4. 50 mm，采用标准GaAs PHEMT 工艺进行了流片并对其性能进行了测试。 The key circuits of the LNA and harmonic mixer were designed and simulated.The receiver frontend chip with an area of 5.50 mm×4.50 mm was fabricated based on standard GaAs PHEMT process andits performance was tested.
43332 在片测试结果表明，在 88 ～ 104 GHz 频段内，通道增益为 5. 0～7. 5 dB，噪声系数小于 5. 2 dB，射频端口电压驻波比约为 2. 0;功耗约为0.48 W。 The on-wafer test results show that in the frequency range of 88－104 GHz, thechannel gain is 5.0－7.5 dB, the noise figure is lower than 5.2 dB, the voltage standing wave ratio of ＲFport is about 2.0 and the power consumption is about 0.48 W.
43333 该接收前端芯片可广泛应用于 W 波段阵列电路中。 The receiver front-end chip can be widely usedin W-band array circuit.
43334 SiC 功率模块随着输出功率增加，结温会随之明显上升，热阻增大，电学性能退化。 As the output power of the SiC power module increases, the junction temperature risessignificantly, the thermal resistance increases, and the electrical performances deteriorates.
43335 因此，研究 SiC 模块热电性能，降低模块热阻和寄生电感对发挥 SiC 模块优良的电学特性非常关键。 Therefore, itis very important to study the thermoelectric properties and reduce the thermal resistance and parasitic inductance of the module to exert the excellent electrical properties of SiC modules.