ID 原文 译文
43316 进一步分析了 13 和 60 MHz 偏置射频频率条件下 FinFET 器件制造中底部抗反射层工艺的刻蚀选择比、Ar 等离子体对氧化硅晶圆的刻蚀速率及刻蚀后鳍 ( Fin) 表面氮化钛的剩余厚度。 The etching selectivityratio of the bottom anti-reflective coating process, SiO2 etching rate in Ar plasma and the remaining thickness of TiN on the surface of Fin after etching were analyzed under the condition of 13 and 60 MHz biasＲF frequency.
43317 结果显示，当偏置射频频率由13 MHz提高为60 MHz 时，获得了对氧化硅材料 121. 9 的刻蚀选择比，且对氮化钛薄膜的刻蚀离子损伤降低了 58. 6%。 The results show that when the bias ＲF frequency increases from 13 to 60 MHz, an etchingselectivity ratio to SiO2 of 121.9 is obtained, and the etching ion damage for TiN thin film is reducedby 58.6%.
43318 与传统光源相比，基于 GaN 材料的发光二极管 ( LED) 具有量子效率高、寿命长等优势，在通用照明、显示、医疗等领域中的应用份额稳步提升。 Compared with traditional light sources, GaN-based light emitting diodes (LEDs) havethe advantages such as high quantum efficiency and long life-time, which make their share of applicationsin general lighting, display, medical and other fields increase steadily.
43319 然而受制于其材料特性与器件结构，GaN 基 LED 在内量子效率与光提取效率方面仍有较大的提升空间。 However, due to its material characteristics and device structure, GaN-based LEDs still have a long way to improve the internal quantumefficiency and light extraction efficiency.
43320 为解决以上关键问题，利用电子束曝光技术成功在 GaN 基 LED 表面的氧化铟锡 ( ITO) 窗口层集成了光子晶体， To solve the key problems above, a photonic crystal structurewas successfully integrated into the indium tin oxide (ITO) window layer of the GaN-based LED surfaceby using the electron beam lithography technology.
43321 并对光子晶体对于 LED 发光波长、电流－电压特性、发光强度等关键参数的调控进行了表征测量， Key parameters such as emission wavelength, currentvoltage characteristics and luminous intensity of the LED regulated by photonic crystals were characterizedand measured.
43322 结果表明，器件的法向电致发光强度提升了 25%，器件的工作电压也有所降低。 The results show that a 25% enhancement of vertical electroluminescence is achieved anda decrease of operating voltage is also observed.
43323 基于 0. 15 μm 砷化镓赝配高电子迁移率晶体管 ( GaAs PHEMT) 工艺，设计并实现了一款 K 波段的平衡式矢量调制器微波单片集成电路 ( MMIC) 芯片。 A K-band balanced vector modulator monolithic microwave integrated circuit (MMIC)was designed and implemented based on 0.15 μm GaAs PHEMT process.
43324 该矢量调制器集成了 Lange耦合器、双相幅度调制器和威尔金森功率合成器，其中双相幅度调制器采用平衡式结构对幅度和相位失真进行了补偿。 The vector modulator integrateda Lange coupler, two bi-phase amplitude modulators and a Wilkinson power synthesizer.The bi-phaseamplitude modulators adopted balanced topology to compensate amplitude and phase distortions.
43325 当工作电压以 10 mV 为步进，从－0. 9～0 V 扫描时，矢量调制器 MMIC 实现了连续幅度调制和 0° ～ 360°的相位调制。 In theoperation voltage range of －0.9－0 V sweeping in a minimum step of 10 mV, the vector modulator MMICdelivers the continuous amplitude modulation and phase modulation from 0° to 360°.