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43306 加入 ZnO 催化剂后，GaN 的去除速率进一步提高，当 H2O2 体积分数为 3%、ZnO 的质量分数为 0. 05%时，GaN 的去除速率达 239. 7 nm /h; When the volume fraction of H2O2 is 3% and the mass fraction of ZnO is0.05%, the removal rate of GaN is 239.7 nm /h.
43307 当 K2 S2O8 体积分数0.15 mol /L、ZnO 的质量分数 0. 05%时，GaN 的去除速率为 428. 0 nm /h，此时 GaN 表面粗糙度为 1. 18 nm。 When the volume fraction of K2 S2O8 is 0.15 mol /Land the mass fraction of ZnO is 0.05%, the removal rate of GaN is 428.0 nm /h.At this time, the GaNsurface roughness is 1.18 nm.
43308 紫外光照射和 ZnO 催化剂能够明显提高 CMP 过程中 GaN 的去除速率。 The removal rate of GaN can be increased significantly by ultravioletirradiation and ZnO catalysts during CMP.
43309 采用 SＲAM 读 /写功能分析、晶圆可接受测试 ( WAT) 分析、SＲAM 操作电路分析相结合的方法，找出 28 nm 工艺平台开发过程中高温 ( 125 ℃ ) 和低温 ( －40 ℃ ) 测试条件下静态随机存储器 ( SＲAM) 比特失效的根本原因， The methods of SＲAM read and write function analysis, wafer acceptance test (WAT)analysis and SＲAM operation circuit analysis were used to find out the root cause of the static random access memory (SＲAM) bit failures at high test temperature (125 ℃) and low test temperature (－40 ℃)during the 28 nm process platform development period,
43310 发现高温比特失效是由于 SＲAM 器件局部不匹配带来的 β 值偏小导致的读串扰失效，低温失效是由于 SＲAM 器件局部不匹配带来的 γ值偏小导致的写失效。 it is found that SＲAM bit failure at high temperature is read disturb failure due to partial mismatch of SＲAM device with a smaller β value, and SＲAM bitfailure at low temperature comes from write failure due to SＲAM device local mismatch with a smaller γvalue.
43311 结果显示 28 nm 工艺平台 SＲAM 的高低温比特失效对 SＲAM 器件的局部匹配及均匀性较敏感， The results show that the SＲAM bit failures at high and low temperatures in 28 nm process platformare very sensitive to the local mismatch and device uniformity of SＲAM.
43312 可以通过优化该平台器件的局部匹配和均匀性改善这种失效。 This kind of failures can be improved by optimizing the local mismatch and device uniformity of devices on the platform.
43313 这种SＲAM 高低温失效的分析方法及结论在集成电路制造行业尤其是对于高阶工艺研发过程具有较好的参考价值。 This kind of analysis method and conclusions of the SＲAM failures at high and low temperatures have a good referencevalue to IC fabrication industry especially to the development of advanced processes.
43314 由于常规电感耦合等离子体刻蚀系统所产生的离子能量分布 ( IED) 为离散的双峰且分布较宽，很难满足在鳍型场效应晶体管 ( FinFET) 刻蚀中对高刻蚀选择比及低离子损伤的要求。 As the ion energy distribution (IED) generated by the conventional inductively coupledplasma etching system is bimodal and widely spread, it is difficult to meet the requirements of highetching selectivity ratio and low ion damage in FinFET etching process.
43315 利用减速场能量分析仪对比了 13 和 60 MHz 偏置射频频率对离子能量分布的影响，在偏置射频频率为 60 MHz 的条件下得到较为收敛的离子能量分布。 The retarding field energyanalyzer was used to compare the effects of 13 and 60 MHz bias ＲF frequency on IED, and a relativelyconvergent IED was obtained under the condition of 60 MHz bias ＲF frequency.