ID 原文 译文
43296 首先介绍了钙钛矿在潮湿环境下容易发生降解的特性及其降解机理。 The characteristics of perovskite decomposition in humid environment and its corresponding mechanisms are introduced.
43297 在此基础上，重点介绍了钙钛矿光电子器件钝化技术的研究进展。 On this basis, the research progress of passivationtechnology of perovskite optoelectronic devices is mainly introduced.
43298 将钝化方式分为改善钙钛矿薄膜晶体质量、疏水处理、优化电子/空穴传输层、封装钝化等， The passivation methods are dividedinto improving the crystal quality of the perovskite thin film, hydrophobic treatment, optimizing electron /hole transport layer, package passivation, etc.
43299 并展示了不同钝化方式对提升钙钛矿光电子器件，如太阳电池、光电探测器的稳定性方面的积极效果。 And the positive effects of different passivation methods on improving the stability of perovskite optoelectronic devices are demonstrated, such as solar cells and photodetectors.
43300 概述了通过调整分子组成以获得自身稳定的钙钛矿薄膜方面所取得的进展， The progress made by researchers in obtaining stable perovskite thin films by adjusting the molecular composition is introduced.
43301 并对钙钛矿光电子器件钝化技术的发展前景进行了展望。 The future development of passivation technology in perovskite optoelectronic devices is prospected.
43302 通过电化学和化学机械抛光 ( CMP) 实验研究了紫外光及催化剂对 GaN 电化学特性及去除速率的影响。 The effects of ultraviolet irradiation and catalyst on the electrochemical properties and removal rate of GaN were investigated by electrochemical and chemical mechanical polishing (CMP) experiments.
43303 电化学实验结果表明，采用 K2 S2O8 作为氧化剂时 GaN 的腐蚀电位随氧化剂的浓度增大而降低。 The results of electrochemical experiments show that the corrosion potential of GaN decreaseswith the increase of the oxidant concentration when K2 S2O8 is used as an oxidant.
43304 在 H2O2 和 K2 S2O8 体系中分别加入 ZnO 催化剂并进行紫外光照射，其腐蚀电位进一步降低，腐蚀速率加快。 When the ZnO catalystis added to the H2O2 and K2 S2O8 systems and irradiated by ultraviolet light, the corrosion potential is further reduced and the corrosion rate is accelerated.
43305 CMP 结果显示，在 H2O2 和 K2 S2O8 抛光液体系中，紫外光的加入能有效提高 GaN 的去除速率; The results show that the removal rate of GaN can beeffectively improved by the addition of ultraviolet irradiation during CMP using the H2O2 and K2 S2O8 polishing solution system, and the removal rate of GaN is further improved after the addition of ZnO catalystin the polishing solution.