ID 原文 译文
43276 其次描述了测试系统的硬件设计及关键设备自动测试系统测试台; Then, the hardware design of the test system and the test platform of the automatic test system for the key equipment were described.
43277 最后给出了宽带微波微系统自动测试系统的软件设计。 Finally, the software design of the automatic test system for the wideband microwavemicrosystem was introduced.
43278 实际测试表明，该自动测试系统测试结果满足该系列组件的测试需求，自动化集成度高、具有良好的通用性， The practical test shows that the test results of the proposed automatic testsystem meet the test requirements of the series of components, and it has high automation integration andgood generality.
43279 与传统的测试方法相比，其测试效率为原来的 40 倍。 The efficiency of the automatic test system is 40 times higher than that of the traditionaltest method.
43280 以四 ( 甲乙胺) 铪 ( TEMAHf) 作为前驱体，采用热原子层沉积 ( TALD) 技术和等离子体增强原子层沉积 ( PEALD) 技术分别在硅衬底上沉积二氧化铪 ( HfO2 ) 薄膜。 HfO2 thin films were deposited on silicon substrate by thermal atomic layer deposition(TALD) and plasma enhanced atomic layer deposition (PEALD) techniques respectively, with the tetrakis (ethylmethylamino) hafnium (TEMAHf) as the precursor.
43281 分别研究了水和臭氧作为共反应物对 TALD HfO2 薄膜性能的影响及采用电容耦合等离子体 ( CCP )PEALD HfO2 薄膜的最佳工艺条件。 The effects of water and ozone, whichacted as the co-reactants, on properties of TALD HfO2 thin films were studied respectively.The optimumcapacitive coupled plasma (CCP) PEALD process condition was studied.
43282 通过 X 射线衍射 ( XＲD) 、扫描电子显微镜 ( SEM) 和光电子能谱 ( XPS) 对不同工艺制备的 HfO2 薄膜的微观结构、表面形貌进行了表征。 The microstructures and surfacemorphologies of the HfO2 thin films deposited by different techniques were characterized by the X-ray diffraction (XＲD) , scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) .
43283 结果表明，反应温度 为 300 ℃ 时，TALD 50 nm 厚 的 HfO2 薄膜为单斜相晶体; The results show that the HfO2 thin films with the thickness of 50 nm deposited by the TALD at the reaction temperature of 300 ℃ crystallize into monoclines.
43284 PEALD 在较低反应温度( 150 ℃ ) 下充分反应，所沉积的 50 nm 厚的 HfO2 薄膜杂质含量较低，薄膜未形成结晶态; Compared with TALD, PEALD fully reacts at alower temperature (150 ℃) , and the deposited HfO2 thin film with the thickness of 50 nm have low impurity and no crystalline state.
43285 PEALD 工艺得到的 HfO2 薄膜的界面层最厚，主要为硅的亚氧化物或铪硅酸盐。 The interface layers of the HfO2 thin film obtained by PEALD process isthe thickest, which are mostly Si sub-oxides or the Hf silicate.