ID 原文 译文
43246 在 400 ℃、空气氛围下退火 1 min 时，获得了低的比接触电阻率，薄膜方块电阻为 102 Ω/□，采用环形传输线法测量的比接触电阻率为 6. 1×10－4 Ω·cm2。 After annealing at 400 ℃ in air for1 min, low specific contact resistivity was obtained.The square resistance of the film is 102 Ω/□.Thespecific contact resistivity of 6.1×10－4 Ω·cm2 was measured by the ring transmission line method.
43247 薄膜的透过率在 478 nm 时达到了 77. 3%。 Thetransmittance of the film reaches 77.3% at the wavelength of 478 nm.
43248 使用该薄膜制备的 LED，开启电压为 2. 5 V，在工作电流为 20 mA 时的工作电压为 2. 9 V，证实了所制备的 Ni /Au 薄膜可用于制备 LED 的透明导电层。 The LED prepared by using thisfilm has a 2.5 V threshold voltage and a 2.9 V working voltage (20 mA working current) .It is confirmedthat the prepared Ni /Au thin film can be used as transparent conductive layer of GaN LED.
43249 超薄氮化镓 ( GaN) 是一种厚度在纳米尺度的少层 GaN 薄片，相对于 GaN 体材料，量子限域效应会使超薄 GaN 的禁带宽度增大，超薄 GaN 有望应用于深紫外电子器件。 Ultra-thin gallium nitride (GaN) is a kind of few-layer GaN flake with a thickness ofnanometer.Compared with the bulk GaN material, the quantum confinement effect increases the band gap width of the ultra-thin GaN, and the ultra-thin GaN material is expected to be used in deep ultravioletelectronic devices.
43250 通过使用微机械剥离法将制备出的少层硒化镓 ( GaSe) 薄片 ( 厚度为 1 ～ 10 nm) 与块状 GaSe 作为前驱体，氨气作为氮源， Few-layer gallium selenide (GaSe) flakes (1－10 nm thickness) prepared by micromechanical exfoliation and a bulk GaSe were used as the precursor, and ammonia was used as a nitrogensource.
43251 在管式炉中不同温度下退火进行氨化，得到超薄 GaN 及块状 GaN。 By annealing the sample in an ammonia environment at different temperatures in a tube furnace, ultra-thin GaN flakes and bulk GaN were obtained.
43252 通过 X射线衍射、扫描电子显微镜、原子力显微镜、光致发光光谱及拉曼光谱对氨化后样品的形貌、成分、光学特性进行了表征。 The morphologies, compositions and optical properties of the ammoniated samples were characterized by using X-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence spectroscopy and Ｒaman spectroscopy.
43253 结果表明，超薄 GaN 的光学带隙比块状 GaN 大 0. 16 eV， The results show that the optical bandgap width of the ultra-thin GaN is 0.16 eV larger than that of the bulk GaN.
43254 拉曼光谱中的纵模光学峰也会随着超薄 GaN 的厚度减小发生蓝移。 Blue shift of the longitudinal mode optical peak in Ｒaman spectrum is also observed by decreasing thethickness of the ultra-thin GaN.
43255 毫米波/太赫兹信号源作为微波系统的关键电路，普遍应用在无线通信、电子对抗、毫米波成像等领域，稳定性高、相位噪声低的毫米波/太赫兹信号源对整体链路起到至关重要的作用。 As one of the key microwave components, the millimeter wave /terahertz frequency signalsource is widely used in wireless communication systems, electronic countermeasure systems, millimeterwave imaging systems, etc. And the millimeter wave /THz signal source with high stability, low phasenoise plays a crucial role in the overall link.