ID 原文 译文
43236 采用有限元分析 ( FEA) 法对一款 FCOL 器件封装回流中热应力进行仿真，通过对比高应力位置与芯片失效位置验证了仿真模型的准确性。 The thermal stresses for a FCOL devicein the reflow process were simulated by the finite element analysis (FEA) method.The accuracy of the simulation model was verified by comparing the high stress positions with the chip failures positions found in experiments.
43237 进而针对 FCOL 器件中多种因素对芯片应力的影响进行了参数化分析，发现芯片厚度和焊点爬锡的形状的不同对芯片上应力有较大影响，研究结果有助于 FCOL 器件的封装可靠性设计。 Furthermore, the influences of various factors on the chip stresses were investigated by parametricanalysis.It is found that the thickness of the chip and the shape of the wicking solder have a greater influenceon the stress.The study results are of benefit to the design of the packaging reliability of FCOL devices.
43238 基于 InP 高电子迁移率晶体管 ( HEMT) 工艺，研制了一款 F 频段三倍频放大多功能芯片。 An F-band triple frequency amplification multi-function chip was fabricated based on InPhigh electron mobility transistor (HEMT) process.
43239 将三倍频器与驱动放大器级联，实现了 F 频段三倍频放大的单片集成。 The tripler was cascaded with the driver amplifier toachieve monolithic integrated circuit of F-band triple frequency amplification.
43240 前端三倍频器电路由输入匹配电路、输入低通滤波电路、并联二极管对、输出高通滤波电路与输出匹配电路构成，通过反向并联二极管对实现三次倍频，在优化匹配前后级电路的同时，通过输入低通滤波器与输出高通滤波器滤除三次谐波外的基波与各次谐波。 The topology of the triplercircuits includes an input matching circuit, an input low pass filter circuit, a reverse parallel diode pair, an output high pass filter circuit and an output matching circuit.Triple frequency was realized by reverseparallel diode pair.
43241 后端所级联的驱动放大器采用四级管芯级联的双电源拓扑结构来提高增益及输出功率。 While optimizing the matching front and rear stage circuits, the fundamental wave andeach harmonic other than the third harmonic were filtered by the input low pass filter and the output highpass filter.
43242 测试结果表明，输入频率为 30 ～ 47 GHz、输入功率为 15 dBm 时，输出频率为 90 ～ 141 GHz，输出功率大于 6 dBm，输入回波损耗小于 －13 dB，输出回波损耗小于－6 dB。 The amplifier cascaded at the back end used a four-stage cascading dual-supply topology to increase gain and output power.The test results show that when the input frequency is in the range of 30－47 GHz and the input power is 15 dBm, the output frequency is 90－141 GHz, the output power is greaterthan 6 dBm, the input return loss is less than －13 dB, and the output return loss is less than －6 dB.
43243 芯片尺寸为 4. 40 mm×1. 60 mm×0. 07 mm。 Thechip size is 4.40 mm×1.60 mm×0.07 mm.
43244 为改善 GaN 基 LED 的 p 型氮化镓 ( p-GaN) 与透明导电层之间的接触性能，采用磁控溅射法在 p-GaN 上制备了 Ni /Au 透明导电层。 To improve the contact performance between p-type gallium nitride (p-GaN) and thetransparent conductive layer prepared on GaN-based light emitting diode (LED) , Ni /Au transparent conductive layer was prepared on p-GaN by magnetron sputtering.
43245 定性地分析了两种金属在薄膜中的作用，通过测量 Ni /Au 透明导电薄膜退火后的比接触电阻率、方块电阻和透过率来获取最优金属层厚度，Ni和 Au 的厚度分别为 3 nm 和 5 nm。 The effects of two metals in the film werequalitatively analyzed.The specific contact resistivity, square resistance and transmittance of the Ni /Autransparent conductive film after annealing were measured to optimize the thicknesses of films.The thicknesses of Ni layer and Au layer are 3 nm and 5 nm, respectively.