ID 原文 译文
43226 该设计具有亚阈带隙的低功耗特性。 The power consumption of the proposedBGR is very low due to the sub-threshold current.
43227 经过多项目晶圆流片后，测试结果表明该芯片在室温下输出基准电压约为 0. 9 V，工作电流约为5 μA，线性调整率为 0. 019% /V; After multi-project wafers process, the test results showthat the chip has an output reference voltage of about 0.9 V at room temperature, an operating current ofabout 5 μA, and a linear regulation of 0.019% /V.
43228 在－40 ～ 125 ℃ 内，温度系数达到 3. 97×10－5 /℃。 The temperature coefficient reaches 3.97×10－5 /℃ inthe temperature range of －40 ℃ to 125 ℃ .
43229 芯片面积为94 μm×85 μm。 The chip area is 94 μm×85 μm
43230 量子级联 ( QC) 超辐射发光二极管 ( SLD) 已经成为众多应用领域 ( 如生物成像、气体探测和红外对抗等) 理想的中红外 ( MIR) 宽光谱光源。 Quantum cascade (QC) superluminescent diodes (SLDs) have emerged as desirable midinfrared (MIR) broadband light sources for increasing number of applications, such as biological imaging, gas detection and infrared countermeasure.
43231 然而，QC 材料基于子带间跃迁的发光模式使其自发辐射效率较低，要获得高功率、宽光谱、可满足实际应用需求的 MIR SLD 具有非常大的挑战。 However, it is challenging to obtain a practical high-power andbroadband MIR device due to the low efficiency of spontaneous emission in the intersubband transitionsbased luminescence mode of QC materials.
43232 基于四阱耦合和双声子共振结构的 QC 材料，并结合仿真模拟设计出新颖的紧凑型分段式波导结构，提高了自发辐射效率，成功研制了发光波长约为 5 μm 的 SLD。 Based on four-quantum-well coupling and two-phonon resonanceQC materials, and combined with simulation, a novel compact sectionalized waveguide structure was designed.The spontaneous emission efficiency was enhanced, and the SLDs with an emission wavelength ofabout 5 μm were successfully developed.
43233 所制备的器件工作温度达到 273 K，光谱半高宽约为 485 nm，同时紧凑的波导结构亦有利于形成阵列结构器件来进一步提高其输出功率，为 MIR 宽光谱光源的实际应用提供参考。 The fabricated SLDs can operate at 273 K with a full width at halfmaximum of about 485 nm, and have the potential to be integrated into array devices without taking up toomuch chip space.These results facilitate the realization of SLD arrays to attain larger output power andprovide a reference for the applications of broadband MIR semiconductor light sources.
43234 引线框架上倒装芯片 ( FCOL) 封装常用于 I/O 数量少的功率芯片封装。 The flip-chip on the lead-frame (FCOL) packaging is suitable for the packaging of powerchips with small I/O quantities.
43235 由于 FCOL封装中铜引线框架和硅芯片的热膨胀系数差异大，热载荷作用下热失配应力导致与焊点相连的芯片表面微结构发生失效破坏。 Due to the great differences of the thermal expansion coefficient between thecopper lead frame and the silicon chip, a high thermal mismatch stress may cause the failure and damage ofthe micro-structure near bumps on the chip under the thermal loading.