ID 原文 译文
43216 光学测试结果显示，CuO 薄膜在近红外区域具有良好的透射性，利用吸收值经过线性外推法测得禁带宽度为 1. 6 ～ 1. 8 eV。 The optical test resultsshow that the CuO thin films have good transmittance in the near-infrared region, and the forbidden bandwidth is 1.6－1.8 eV measured by the linear extrapolation method using the absorption value.
43217 电学测试结果显示，制备的薄膜样品均为 p 型导电; The electrical test results show that the prepared thin film samples are all p-type conductive.
43218 且随氧氩比的增加，CuO 薄膜样品迁移率由 0. 027 cm2 /( V·s) 增加至0. 201 cm2 /( V·s) ，载流子浓度由近 1021 cm－3减小至 1019 cm－3，电阻率减小 1 kΩ·cm。 With the increase ofoxygen-argon ratio, the mobility of the CuO thin film samples increases from 0.027 cm2 / (V·s) to0.201 cm2 / (V·s) , the carrier concentration decreases from 1021 cm－3 to 1019 cm－3, and the resistivityhas a decrease of 1 kΩ·cm.
43219 基于 4 μm 40 V 互补双极工艺，设计了一款精准、低噪声、轨到轨输入输出运算放大器。 Based on the 4 μm 40 V complementary bipolar process, a precise, low noise and railto-rail input /output operational amplifier was designed.
43220 电路采用轨到轨互补输入级，并在此基础上采用了一种新型的低噪声偏置电流补偿电路，该结构的电流噪声与运算放大器输入双极晶体管的电流噪声为相关噪声，同时该电路还可大幅降低运算放大器的输入偏置电流，减小源电阻噪声对电路的不良影响，从而确保运算放大器具有极低的等效输入电压噪声和电流噪声。 Based on the rail-to-rail complementary inputstage, a new kind of low noise bias current compensation circuit was used.The current noise of the proposed structure was correlated with the current noise of the operational amplifier input bipolar junctiontransistors.At the same time, the circuit can also greatly reduce the input bias current of the operationalamplifier and reduce the adverse impact of the source resistance noise on the circuit, thus ensuring theoperational amplifier has extremely low equivalent input voltage noise and current noise.
43221 测试结果表明，利用该结构设计的轨到轨输入输出运算放大器，其带宽为 5. 05 MHz，大信号低频增益为 136. 2 dB，输入偏置电流仅为 29. 8 nA，输入失调电流为 11. 9 nA，输入失调电压为 188 μV，输入电压噪声密度为 4. 76 nV/槡Hz ( @ 1 kHz) 、共模抑制比 ( CMRR) 为 121. 6 dB，电源抑制比 ( PSRR) 高达 117. 3 dB。 The test resultsshow that the rail-to-rail input /output operational amplifier with this structure has a bandwidth of5.05 MHz, a large signal low frequency gain of 136.2 dB, a low input bias current of 29.8 nA, an input offset current of 11.9 nA, an input offset voltage of 188 μV, an input voltage noise density of4.76 nV/槡Hz at 1 kHz, a common mode rejection ratio (CMRR) of 121.6 dB, and a high power supply rejection ratio (PSRR) of 117.3 dB
43222 基于 CSMC 0. 18 μm BCD 工艺，在传统亚阈带隙基准 ( BGR) 的基础上进行了改进，设计了一款新型亚阈 BGR。 A novel sub-threshold bandgap reference (BGR) improved from conventional subthreshold BGR was designed based on CSMC 0.18 μm BCD process.
43223 利用 BCD 工艺中普通 MOSFET 和高压 MOSFET 的特性差异，使器件工作在亚阈状态，产生亚阈电流。 The device could operate in a subthreshold state to generate a sub-threshold current by utilizing the characteristic differences between thecommon MOSFET and high-voltage MOSFET in BCD process.
43224 通过特定设计使该电流对电源变化和工艺变化不敏感，在各个工艺角下均能稳定产生亚阈电流。 The current is insensitive to power supplyand process variations through a specific design and a sub-threshold current can be stably generated ateach process angles.
43225 再利用亚阈电流产生多级正温度系数 ( PTAT) 电压，结合负温度系数 ( CTAT) 电压加权后，获得零温度系数电压。 The sub-threshold current was then utilized to generate a multilevel proportional toabsolute temperature (PTAT) voltage.A zero temperature coefficient voltage was achieved after weightingwith a complementary to absolute temperature (CTAT) voltage.