ID 原文 译文
43206 对全聚合物太阳电池的发展前景进行了分析和预测，全聚合物太阳电池的研究将在未来的商业应用中占据重要位置。 The research of all-polymer solar cells will play an important role in the futurecommercial applications.
43207 基于低成本溶液法的浸渍提拉成膜工艺以无机 In-Al-Zn-O ( IAZO) 为沟道层，以有机聚甲基丙烯酸甲酯 ( PMMA) 为介质层，研制了无机/有机混合型薄膜晶体管 ( TFT) ，探究了PMMA 厚度对 IAZO TFT 电学特性和电学稳定性的影响。 The hybrid thin-film transistors (TFTs) with inorganic In-Al-Zn-O (IAZO) as the channel layer and organic polymethyl methacrylate (PMMA) as the dielectric layer were fabricated by a lowcost solution method based dip coating process.The effects of PMMA thickness on the electrical characteristics and electrical stability of IAZO TFTs were investigated.
43208 结果表明，具备较薄 PMMA 介质层的TFT 呈现出更优越的工作特性 ( 饱和迁移率大于 20 cm2·V－1·s－1，电流开关比高于 104) ，然而随着介质层厚度的减薄，经过疲劳测试后的器件电学稳定性却明显退化。 The results show that the TFTs with thinner PMMA dielectric layers exhibit superior operating characteristics with a saturation mobility of greaterthan 20 cm2·V－1·s－1 and an on /off current ratio of over 104.However, the electrical stability of thedevice after the repeating test degrades obvioursly with the decrease of the dielectric layer thickness.
43209 此外，有机 PMMA 介质层 ( 厚度 390 nm) 叠加于无机 IAZO 沟道层有一定的增透效果: Moreover, it has a certain anti-reflection effect when combining the organic PMMA dielectric layer (with athickness of 390 nm) with the inorganic IAZO channel layer.
43210 IAZO/PMMA 双层薄膜在可见光区 ( 波长 400～700 nm) 的平均透过率 ( 95. 0%) 高于单层 IAZO 的平均透过率 ( 93. 0%) ，表明所选用的 IAZO 和 PMMA 材料在制备全透明器件方面具备一定的应用潜力。 The average transmittance of the IAZO/PMMA double-layer thin film in the visible region (wavelength of 400 － 700 nm) is 95.0%, which ishigher than that of the IAZO single layer (93.0%) .This result indicates that the selected IAZO andPMMA materials have certain application potential in the preparation of fully transparent devices.
43211 采用射频磁控溅射法利用铜靶在硅片和蓝宝石衬底上制备 CuO 薄膜，研究氧氩比对CuO 薄膜的晶体结构、表面形貌和光电特性的影响。 CuO thin films were deposited on sillicon wafers and sapphire substrates using coppertargets by the RF frequency magnetron sputtering method.The effects of oxygen-argon ratio on the crystalstructure, surface morphology, optical and electrical properties of the CuO thin films were investigated.
43212 X 射线衍射测试结果显示，较低的氧氩比下，薄膜样品由 Cu2O 和 CuO 组成; X-ray diffraction test results show that the thin film samples are composed of Cu2O and CuO at the loweroxygen-argon ratio.
43213 在氧氩比达到 5 ∶ 35 时，薄膜成份仅为 CuO; The thin film composition is only CuO at the oxygen-argon ratio of 5 ∶ 35.
43214 且随着氧氩比的增加，CuO 薄膜由 ( 002) 取向逐渐转向 ( 111) 取向。 And as theoxygen-argon ratio increases, the CuO thin films gradually shift from (002) orientation to the (111)orientation.
43215 扫描电子显微镜图像显示 CuO 薄膜均匀，随氧氩比增加晶粒尺寸逐渐变小。 The scanning electron microscope images show that the CuO thin films are uniform, and thegrain size gradually becomes smaller with the increase of the oxygen-argon ratio.