ID 原文 译文
43186 在25～300 K，对采用改进生长方法生长的大尺寸 CdS 单晶进行了霍尔迁移率、载流子浓度和电阻率等测试，其迁移率最高可达 7 000 cm2·V－1·s－1，为大尺寸 CdS 单晶在器件中的实际应用提供了重要的数据支撑。 At25－300 K, Hall mobility, carrier concentration and specific resistivity of the large size CdS single crystalgrown by the improved growth method were tested, and the mobility is up to 7 000 cm2·V－1·s－1, whichprovides important data support for the practical application of large size CdS single crystals in devices
43187 研究了在抛光液中分别添加非离子表面活性剂异辛醇聚氧乙烯醚 ( JFCE) 、阴离子表面活性剂十二烷基苯磺酸 ( LAS) 和阳离子表面活性剂十二烷基三甲基氯化铵 ( DTAC) 对 a 面蓝宝石衬底化学机械抛光 ( CMP) 去除速率和表面状态的影响。 The effects of the slurry with the nonionic surfactant isooctanol polyoxyethylene ether(JFCE) , anionic surfactant dodecylbenzene sulfonic acid (LAS) and cationic surfactant dodecyltrimethyl ammonium chloride (DTAC) on the chemical mechanical polishing (CMP) removal rate andsurface state of the a-plane sapphire substrate were studied respectively.
43188 通过对抛光液中磨料粒径和 Zeta 电位的分析可知，JFCE、LAS 对粒径和 Zeta 电位影响不大，DTAC 对粒径和 Zeta 电位有一定影响，当DTAC 体积分数增加到 0. 5%时，抛光液中会出现凝胶现象。 The analysis results of the abrasive particle size and Zeta potential of the slurry show that JFCE and LAS have little effect on the particlesize and Zeta potential, while DTAC has a certain effect on the particle size and Zeta potential of theslurry.When the volume fraction of DTAC is increased to 0.5%, gelation occurs in the slurry.
43189 采用原子力显微镜、接触角检测仪对CMP 后蓝宝石表面状态进行了分析和表征，结果表明，在一定浓度范围内三种表面活性剂均有助于提高蓝宝石去除速率和降低表面粗糙度，当其体积分数均为 0. 4%时，使用添加 DTAC 的抛光液时 a 面蓝宝石的去除速率最大、表面粗糙度最低，更有利于衬底表面的洁净化。 The surface state of sapphire after CMP was analyzed and characterized by atomic force microscope and contactangle detector.The results show that the three surfactants can improve the removal rate and reduce thesurface roughness of a-plane sapphire within a certain concentration range.When the volume fraction ofthe three surfactants is 0.4%, the removal rate of sapphire is the highest and the surface roughness of thesapphire is the lowest when the slurry was added with DTAC, which is more conducive to the cleanlinessof the substrate surface.
43190 钝化发射极及背面接触 ( PERC) 太阳电池技术叠加激光选择性发射极 ( SE) 制备工艺是近年发展起来的提升 PERC 太阳电池效率的有效方法之一，但是在 SE 的制备过程中易发生磷硅玻璃 ( PSG) 层被激光烧蚀的现象，导致电池性能下降。 The combination of the passivated emitter and rear contact (PERC) solar cell technologyand the laser selective emitter (SE) preparation process is one of the effective methods to improve the efficiency of the PERC solar cell developed in recent years.However, in the SE preparation process, thephosphorosilicate glass (PSG) layer is prone to ablation, which leads to the degradation of cell performance.
43191 通过研究激光波长、脉冲频率、激光功率和扫描速度对硅片表面形貌、表面方块电阻、电池性能的影响，探索高效率、低损伤 SE太阳电池的制备方法。 By studying the effects of laser wavelength, pulse frequency, laser power and scanning speed onthe surface morphology, surface sheet resistance and cell performance of silicon wafers, the preparationmethod of high efficiency and low damage SE solar cells was explored.
43192 实验结果表明，在激光波长为 1 064 nm、激光功率为 2 W、脉冲频率为30 Hz条件下可获得最佳电池性能，SE 太阳电池光电转换效率最高达到 22. 01%，与传统工艺制备的太阳电池相比提升约 0. 51%。 The experimental results show thatthe optimun cell performance can be obtained under the condition of laser wavelength of 1 064 nm, laserpower of 2 W and pulse frequency of 30 Hz.The photoelectric conversion efficiency of SE solar cells is upto 22.01%, which is about 0.51% higher than that of the solar cells prepared by traditional process.
43193 分别选用 FA/O Ⅱ型螯合剂和柠檬酸钾 ( CAK) 单独配置及复合配置多层铜布线阻挡层抛光液，对 Cu 和正硅酸乙酯 ( TEOS) 介质层进行化学机械抛光 ( CMP) ，研究复合络合剂对材料去除速率、碟形坑和蚀坑的影响。 The FA/O Ⅱ type chelating agent and potassium citrate (CAK) were used separatelyand in combination to configure the multilayer copper wiring barrier layer polishing slurry for Cu and tetraethyl orthosilicate (TEOS) chemical mechanical polishing (CMP) .The effects of the compound complexing agent on the material removal rate, dishing pit and erosion pit were studied.
43194 结果表明，单独使用 FA/O Ⅱ型螯合剂配置抛光液时，随着螯合剂的增加，Cu 去除速率明显增加，而 TEOS 去除速率趋于减小; The results show thatwhen the polishing slurry is configured with FA/O Ⅱ type chelating agent alone, the removal rate of Cuincreases significantly with the increase of FA/O Ⅱ type chelating agent, and the removal rate of TEOStends to decrease.
43195 单独使用 CAK 配置抛光液时，随着 CAK 的增加，Cu 去除速率缓慢增加，而 TEOS 去除速率明显增加; When CAK is used to configure the polishing slurry alone, the removal rate of Cu increases slowly with the increase of CAK, while the removal rate of TEOS increases obviously.