ID 原文 译文
43176 化学机械抛光 ( CMP) 是集成电路 ( IC) 制造过程中的一种基本工艺。 Chemical mechanical polishing (CMP) is a basic process of integrated circuit (IC)manufacturing.
43177 在铜 CMP 过程中，缓蚀剂在获得全局平面化和防止腐蚀方面起着关键作用。 Corrosion inhibitors play a key role in obtaining global planarization and preventing corrosion during copper CMP.
43178 阐述了常用的缓蚀剂———苯并三氮唑 ( BTA) 在抛光液中的应用，并指出 BTA 由于其本身的局限性已经难以适应 IC 发展的技术需求。 The application of benzotriazole (BTA) , a commonly used corrosion inhibitor, in the polishing solution is described.
43179 对近年来国内外能够替代 BTA 的新型缓蚀剂进行了归纳总结。 It is pointed out that BTA has been difficult to adapt to technical requirements for IC development due to its own limitations.
43180 与 BTA 相比，新型缓蚀剂能够更好地解决结构性损伤、电偶腐蚀和残留污染物的危害等问题。 It is pointed out that BTA has been difficult to adapt to technical requirements for IC development due to its own limitations.The new corrosion inhibitors that can replaceBTA all over the world in recent years are summarized.Compared with BTA, the new corrosion inhibitorscan better solve the problems of structural damage, galvanic corrosion and residual pollutants.
43181 最后，对缓蚀剂在铜布线CMP 过程中的发展趋势进行了分析和展望。 Finally, the development trends of corrosion inhibitors in copper wiring CMP are analyzed and prospected.
43182 在碱性条件下，未来需要重点研究缓蚀剂的缓蚀效果、作用机理、复配协同效应以及去除等问题。 In alkaline conditions, it is necessary to focus on the corrosion inhibition effect, mechanism, synergistic effectand removal of corrosion inhibitors in the future.
43183 CdS 单晶是一种电学和光学性能优异的Ⅱ-Ⅵ族直接带隙半导体材料，近年受到人们的广泛关注。 : CdS single crystal is a kind of Ⅱ-Ⅵ direct band gap semiconductor materials with excellent electrical and optical properties.It has attracted more and more attention in recent years.
43184 但是大尺寸 CdS 单晶在生长过程中易形成孔洞缺陷，质量难以控制，使其电学性能不稳定，制约着晶体的实际应用。 However, void defects are easily to be formed in these large size CdS single crystals during the growth process.CdSquality is difficult to control, which makes the electrical properties of CdS crystals unstable and restrictstheir practical applications.
43185 采用物理气相传输 ( PVT) 法成功地生长了尺寸为 55 mm×15 mm 的 CdS 单晶，对 CdS 单晶中孔洞产生的过程、孔洞形成的原因进行了分析和研究，进而提出了改进的 CdS 晶体生长技术，降低了晶体孔洞缺陷的密度，提高了 CdS 晶体的质量。 CdS single crystals with the size of 55 mm×15 mm were successfully grown byphysical vapor transport (PVT) method.The process and causes of voids formation in the CdS singlecrystal were analyzed and studied.Furthermore, an improved CdS crystal growth technology wasproposed, which reduces the density of the void defects and improves the quality of the CdS crystals.