ID 原文 译文
43166 该 Buck 电路基于 SMIC 0. 13 μmCMOS 工艺实现，并已集成到物理层芯片内部。 The Buck circuit wasrealized based on the SMIC 0.13 μm CMOS process and was integrated into the physical layer chip.
43167 测试结果表明，电路能够实现 3. 3 V 转换到1. 2 V±25 mV 的功能;带载电流为 100. 9 mA，转换效率达到 91%;定时器产生的恒定导通时间为 410 ns; Thetest results show that the circuit can achieve the function of the voltage conversion from 3.3 V to 1.2 V±25 mV, the load current is 100.9 mA, the conversion efficiency reaches 91%, and the constant on-timegenerated by the timer is 410 ns.
43168 启动过程中输出电压变化较为平稳，没有过冲，最后稳定在 1. 194 V±25. 25 mV，启动时间为 250 μs。 The output voltage changes smoothly without overshoot during the startupprocess and finally stabilizes at 1.194 V±25.25 mV and the startup time is 250 μs.
43169 基于半绝缘 InP 衬底的辐射探测器在 X 射线成像领域有着广阔的应用前景。 The radiation detector based on semi-insulating InP substrate has a broad applicationprospect in the field of X-ray imaging.
43170 半绝缘InP 衬底中 Fe 的掺杂量对 InP 基辐射探测器的性能有一定的影响。 The doping amount of Fe in semi-insulating InP substrate has acertain influence on the performance of InP-based radiation detector.
43171 通过液封直拉 ( LEC) 法和垂直梯度凝固 ( VGF) 法生长了掺 Fe 半绝缘 InP 单晶，并对普通 Fe 掺杂 ( 0. 3 g /kg) 和低 Fe 掺杂的 InP 单晶的电参数特性、光学特性及辐射特性等方面进行了研究。 Fe-doped semi-insulating InP singlecrystals were grown by liquid encapsulated Czochralski (LEC) and vertical gradient freeze (VGF)methods.The electrical parameters, optical and radiation properties of normal Fe-doped (0.3 g /kg) andlow Fe-doped InP single crystals were studied.
43172 测试数据表明 VGF 生长的 InP 单晶的位错密度小于 500 cm－2，缺陷非常少。 The test data show that the VGF-grown InP single crystalhas a dislocation density of less than 500 cm－2 and very few defects.However, the poly-InP must be usedas a raw material for VGF, and the doping amount of Fe should not be less than 0.
43173 但 VGF 必须使用多晶 InP 作为原料，Fe 的掺杂量不能低于 0. 3 g /kg，造成晶体中的杂质含量较高。 However, the poly-InP must be usedas a raw material for VGF, and the doping amount of Fe should not be less than 0.3 g /kg, which resultsin high impurity content in the crystal.
43174 低 Fe 掺杂 LEC 生长的 InP 单晶的掺杂量只有普通掺杂的一半，经过退火，低 Fe 掺杂 LEC 生长的 InP 的电阻率达到 4. 9×107 Ω·cm，迁移率达到 4 410 cm2·V－1·s－1，位错密度小于 1×104 cm－2，显示出了较好的半绝缘特性且晶体质量良好。 The doping amount of the low Fe-doped LEC-grown InP singlecrystal is only half of that of the normal doping.After annealing, the resistivity of low Fe-doped LECgrown InP reaches 4.9 × 107 Ω·cm, the mobility reaches 4 410 cm2·V－1·s－1, and the dislocationdensity is less than 1×104 cm－2, which shows good semi-insulating property and good crystal quality.
43175 使用低 Fe 掺杂半绝缘 InP 制成的辐射探测器显示出了良好的性能。 Theradiation detector made of low Fe-doped semi-insulating InP shows good performance.