ID 原文 译文
43146 该设计已应用于高精度嵌入式电源管理芯片的低压差线性稳压器中。 The design hasbeen used in low dropout regulators in high precision implanted power management chips.
43147 针对一种锂离子电池管理芯片的失效定位进行了研究。 The failure localization of a lithium-ion battery management chip was studied.
43148 某单机在测试时由于锂离子电池管理芯片失效，导致所采集的电压数据间歇异常跳变。 The acquired voltage data of a single-machine intermittently jumped during testing caused by the failure of alithium-ion battery management chip.
43149 经一致性分析，发现失效锂离子电池管理芯片老炼后的转换功耗和回读功耗与同批次芯片相比异常增加。 After consistency analysis, it is found that the conversion powerconsumption and the read-back power consumption of the failure chip are abnormally higher than those ofthe same batch chips.
43150 通过微光分析和版图对比，发现失效芯片中菊花链电流比较器的 NMOS 管存在漏电缺陷。 Through emission microscopy and layout comparison, it is found that the NMOSFETin the daisy chain current comparator of the failure chip has a leakage failure.
43151 对比较器工作原理进行进一步分析，并分析了 SCLK 接口和 CNVST 接口的翻转阈值与功耗变化量之间的关系， The operational principle ofthe comparator was further analyzed, and the relationship between the reversal threshold and the powerconsumption variation of the SCLK and CNVST interfaces were analyzed.
43152 确认了芯片失效是由于 NMOS 管漏电所导致，且通过电老炼可以暴露 NMOS 管的漏电缺陷。 It is confirmed that the chip failure is cause by the leakage of the NMOSFET, and the leakage failure can be exposed through an burn-intest.
43153 最后，针对器件功耗变化量与内部 NMOS 管漏电之间的关系进行了仿真和计算， The correlation between the power consumption variation of the chip and the leakage of the internalNMOSFET were simulated and calculated.
43154 定量验证了锂离子电池管理芯片老炼后功耗的增加是由于比较器 NMOS 管漏电引起的。 It is quantitatively verified that the increase of the power consumption of the lithium-ion battery management chip after the burn-in test is caused by the leakage of theNMOSFET in the comparator.
43155 研制了一种工作于 C 波段的薄膜体声波谐振器 ( FBAＲ) 滤波器。 A kind of film bulk acoustic resonator (FBAＲ) filter for C band application was developed.