ID 原文 译文
43136 结果显示在 1. 8 V 电源电压下，输出电压为 559 mV， The results show that the output voltage is559 mV at a power supply voltage of 1.8 V.
43137 在－40 ～ 130 ℃内，温度系数为 6. 47×10－6 /℃， The temperature coefficient is 6.47×10－6 /℃ in a temperature range of －40－130 ℃ .
43138 电源抑制比为－54. 26 dB，总工作电流仅为 0. 48 μA，芯片面积为0.003 7 mm2。 The power supply rejection ratio is －54.26 dB.The total operating current isonly 0.48 μA, and the chip area is 0.003 7 mm2.
43139 基于 0. 13 μm CMOS 工艺设计了一个高阶曲率补偿带隙基准电压源，该带隙基准电压源具有低温度系数和高电源抑制比 ( PSＲＲ) 。 A high-order curvature compensation bandgap reference voltage source was designedbased on 0.13 μm CMOS process with a low temperature coefficient and high power supply rejection ratio(PSＲＲ) .
43140 通过高阶曲率补偿电路得到低温度系数; The low temperature coefficient was obtained by a high-order curvature compensation circuit.
43141 在该带隙基准电压源的核心电路中，使电流镜管的栅源电压保持恒定值来实现在一定频段下的 PSＲＲ 增强。 Inthe core circuit of the bandgap reference voltage source a constant gate-source voltage in the currentmirror was maintained to enhance the PSＲＲ under a certain frequency.
43142 利用 Cadence 工具进行了仿真，并进行了流片验证， The Cadence tool was used for thesimulation, and the chip was fabricated and verified.
43143 测试结果表明，该带隙基准电压源具有恒定的 1. 2 V 基准电压，在－ 45 ～ 165 ℃ 内，基准电压的温度系数为 3. 95 × 10－6 /℃ ; The test results show that the bandgap referencevoltage source has a constant reference voltage of 1.2 V and temperature coefficient of the referencevoltage is 3.95 × 10－6 /℃ in the temperature range of － 45 － 165 ℃ .
43144 PSＲＲ 在10 kHz下为 74. 7 dB，在 1 MHz 下为 42 dB; The circuit performs a PSＲＲ of74.7 dB@ 10 kHz and 42 dB@ 1 MHz,
43145 电路启动时间为 1. 4 μs。 and the start-up time of the circuit is 1.4 μs.