| ID | 原文 | 译文 |
| 43126 | 从相位噪声产生机理、噪声来源及相位噪声与抖动的关系等方面分析影响分频器相位噪声的关键因素， | The key factors affecting the phasenoise of the frequency divider were analyzed in terms of the generation mechanism of the phase noise, thenoise source and the relationship between the phase noise and jitter. |
| 43127 | 通过工艺选择、电路设计和仿真分析来优化分频器的相位噪声。 | The phase noise of the frequency divider was optimized by the process selection, circuit design, and simulation analysis. |
| 43128 | 采用 0. 13 μm SiGe BiCOMS 工艺进行了设计仿真和流片，芯片面积为 1. 3 mm2。 | The frequency dividerchip with an area of 1.3 mm2 was designed and fabricated using the 0.13 μm SiGe BiCOMS process. |
| 43129 | 测试结果表明:该分频器最高工作频率为 20 GHz，电源电压为+3. 3 V，最大电流为 80 mA，可实现 1～31 连续分频， | The test results show that the maximum operating frequency is 20 GHz, the power supply voltage is +3.3 V, and the maximum current is 80 mA.The frequency divider can achieve 1～31 continuous frequency division. |
| 43130 | 在输入 6 GHz 正弦波信号下 20 分频时的相位噪声为－145 dBc /Hz@ 1 kHz。 | The phase noise of the 6 GHz input sinusoidal signal is －145 dBc /Hz@ 1 kHz at 20-frequency division. |
| 43131 | 设计了一种带有曲率补偿的低功耗带隙基准电压源电路。 | A low power consumption bandgap reference voltage source circuit with curvature compensation was designed. |
| 43132 | 该基准源电路主要由启动电路、运算放大器、正温度系数 ( PTAT) 电路、负温度系数 ( CTAT) 电路和曲率补偿电路组成。 | The reference source circuit was mainly composed of the starting circuit, operational amplifier, proportional to absolute temperature (PTAT) circuit, complementary to absolute temperature (CTAT) circuit and curvature compensation circuit. |
| 43133 | 电路中采用 MOSFET 替代传统双极结型晶体管作为 CTAT 来源，并在一阶带隙基础上结合高阶曲率补偿技术，以降低温度系数、提高线性度。 | In the circuit, MOSFETs were used to replaceconventional bipolar junction transistors as the CTAT source, and the high-order curvature compensationtechnology was applied additionally on the basis of the first-order bandgap to reduce the temperature coefficient and improve the linearity. |
| 43134 | 基于 CSMC 0. 18 μm 工艺设计了该带隙基准电压源芯片，并将其应用于一种超低功耗的模数转换器 ( ADC) 中。 | The chip was designed based on CSMC 0.18 μm process and applied inan ultra-low power consumption analog-to-digital converter (ADC) . |
| 43135 | 在完成 ADC 的流片后对带隙基准电压源单独进行参数测试， | Parameter testing for the bandgapreference source was performed after the ADC was fabricated. |