ID 原文 译文
43076 该设计在 133 MHz 的工作频率下实现了 38. 3 GOPS 的峰值算力。 This design achieves a peak computing performance of 38.3 GOPS at 133 MHz.
43077 该芯片在 1. 2 V 的电源电压下功耗为 109 mW，芯片能效为 0. 351 TOPS /W。 The power consumption of the chip is 109 mW at a supply voltage of1.2 V, and the energy efficient is 0.351 TOPS /W.
43078 研究了一种新型抑制剂 ( 2，2'- ［［( 甲基-1H-苯并三唑-1-基) 甲基］ 亚氨基］ 双乙醇，TT-LYK) 在高碘酸钾 ( KIO4 ) 体系下对 Cu /Ｒu 电偶腐蚀的影响。 The effect of a new kind of inhibitor TT-LYK on Cu /Ｒu galvanic corrosion in the potassium periodate system (KIO4) was studied.
43079 通过电化学实验研究了抑制剂对 Cu /Ｒu 电偶腐蚀的抑制情况，使用 X 射线光电子能谱 ( XPS) 分析了抑制剂在 Ｒu 表面的作用机理，使用原子力显微镜 ( AFM) 观测抛光后晶圆的表面形貌。 The inhibition of inhibitors on Cu /Ｒu galvanic corrosion was studied by electrochemical experiments.The action mechanism of inhibitors on the surface of Ｒu was analyzed by using X-ray photoelectron spectroscopy (XPS) .The surface morphology of the polished waferwas observed by atomic force microscope (AFM) .
43080 电化学测试结果显示，随着抛光溶液中抑制剂质量分数的升高，Cu 和 Ｒu 之间的腐蚀电位差逐渐从 730 mV 降低到 37 mV。 The results of electrochemical experiments show that the corrosion potential difference between Cu and Ｒu decreases from 730 mV to 37 mV with the increaseof the mass fraction of the inhibitor in the slurry.
43081 新型抑制剂 TT-LYK 在 Cu 互连 Ｒu 阻挡层化学机械平坦化 ( CMP) 中能够抑制 Cu /Ｒu 的电偶腐蚀。 The new inhibitor TT-LYK can inhibit the Cu /Ｒu galvanic corrosion during chemical mechanical planarization (CMP) for Cu interconnect Ｒu barrier layer.
43082 抑制剂 TT-LYK 与 Ｒu 发生反应，在 Ｒu 表面生成一层钝化膜，抑制了 Cu 和 Ｒu 之间的电偶腐蚀。 TT-LYK can react with Ｒu to form a passivation film on Ｒu surface, which can inhibit the galvanic corrosion between Cu and Ｒu.
43083 抛光液中添加抑制剂 TT-LYK 后，抛光后 Cu 的表面粗糙度由 5. 94 nm 降低到 0. 39 nm，Ｒu 的表面粗糙度由 5. 12 nm 降低到 0. 24 nm。 In addition, after the addition of the inhibitor TT-LYK to the slurry, the surface roughness of the polished Cu decreases from 5.94 nm to 0.39 nm, and the surface roughness of Ｒudecreases from 5.12 nm to 0.24 nm.
43084 在深亚微米 CMOS 集成电路制造工艺中，应力对 MOS 器件性能的影响已经不可忽略。 In the deep submicron CMOS integrated circuit manufacturing technology, the effect ofstress on performance of MOS devices cannot be ignored.
43085 应力可以改变半导体载流子的迁移率，因此影响 MOS 器件的饱和电流。 Stresses change the mobility of semiconductorcarriers and affect the saturation current of MOS devices.